Talbot lithography as an alternative for contact lithography for submicron features

Dunbar, L. A.; Nguyen, David; Timotijević, B.; Vogler, Uwe; Veseli, S.; Bergonzi, Giovanni; Angeloni, Silvia; Bramati, Arianna; Voelkel, Reinhard; Stanley, R. P.

doi:10.1117/12.2036896

Cited by 9 publications

(1 citation statement)

References 7 publications

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“…8 This is a complex task when using Excimer lasers as illumination source, as they suffer from being composed of many modes. 9 Various aspects of Talbot lithography have been addressed in the past, 10,11,12,13,14 including displacement Talbot lithography, 15 self-assembled nanosphere masks, 16 extreme ultraviolet Talbot lithography, 17 and fractal and fractional 18 as well as quantum Talbot effects. 19,20 Most of the experimental examples rely on i-line maskaligner illumination at a wavelength of 365 nm.…”

Section: Introductionmentioning

confidence: 99%

Mask-aligner Talbot lithography using a 193 nm CW light source

Vetter

Kirner

Opalevs

et al. 2018

Optical Microlithography XXXI

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We present and discuss Talbot mask-aligner lithography, relying on a continuous wave laser emitting at 193 nm for the illumination. In this source, a diode laser at 772 nm is amplified by a tapered amplifier in master-oscillator power-amplifier configuration and frequency-quadrupled in two subsequent enhancement cavities using lithium triborate and potassium fluoro-beryllo-borate nonlinear crystals to generate the emission at 193 nm. The high coherence and brilliance of such an illumination source is predestined for plane wave mask-aligner illumination, crucial in particular for high-resolution lithographic techniques such as Talbot lithography and phase-shift masks. Talbot lithography takes advantage of the diffraction effect to image periodic mask features via self-replication in multiples of the Talbot distance behind the photomask when exposed by a plane wave. By placing a photoresistcoated wafer in one of the Talbot planes, the mask pattern is replicated in the resist. Periodic patterns with diverse shapes are required for wire grid polarizers, diffraction gratings, and hole arrays in photonic applications as well as for filters and membranes. Using an amplitude mask with periodic structures, we demonstrate here with such a technique sub-micron feature sizes for various designs at a proximity gap of 20 µm.

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