Isochronal annealing experiments on dc-sputtered indium tin oxide (ITO) films in inert (N2), reducing (N2/H2) and oxidizing atmospheres were cumulatively performed over the 50→500→50 °C range. Three anneal regimes have been identified. In region I, TA=50→200 °C, crystallization occurs, resulting in a sharp drop in sheet resistance (Rs) due to increasing mobility. TA?200 °C results in a minimum Rs. In region II, 200→500→200 °C, Rs is proportional to TA, increasing (decreasing) during the forward (reverse) anneal cycle. This behavior is apparently due to a temperature-dependent active oxygen concentration and its effect on the carrier concentration. In region III, 200→50 °C, Rs is constant with TA. Optical transmission and x-ray diffraction experiments were performed at 100 °C intervals. Successive anneals tended to increase the transmission in the visible and near-UV regions and to decrease it in the near- and far-IR region. Strong evidence of the Burstein-Moss shift was observed and an extrapolated intrinsic band gap of 3.85 eV was determined. Free-carrier absorption over the 2–5-μm regions was evident after the 200 °C anneal for all ambients. From the x-ray data, no evidence of crystallinity was observed in the as-deposited case and for anneals up to 100 °C. For anneals in the 300–500 °C range, a grain size of the order of 600 Å with an orientation normal to the (222) plane was observed for all ambients.
In this paper,Zinc oxide was dopped by various concentrations (5,10,15,20,25) % wt, silicon oxide The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films .The optical properties of thin films prepared on spectral absorption and transmission recording were studied at the wavelength range (200- 1100) nm. Some of the optical constants, including absorptance, transmission, absorption coefficient, and energy gap are calculated before and after annealing at (400 ̊C) for (1 hr). Absorptance values and absorption coefficient increase after doping and transmission and energy gap decreases after the doping. Absorbance values and absorption coefficient decreases after annealing and transmission and energy gap increase after the annealing .
http://dx.doi.org/10.25130/tjps.24.2019.015
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