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The insertion of the CeO2 intermediate layer between the TiO2 layer and the Si substrate reduced the leakage current significantly after rapid thermal annealing (RTA) in O2 ambient for 3 min. After RTA, the TiO2/CeO2/Si structure showed a significantly lower leakage current than the TiO2/Si structure. At a proper voltage of −2 V, which was defined as the difference between the applied gate bias and the flatband voltage, the leakage current density of the TiO2/CeO2/Si structure was ∼10−8 A/cm2, while the leakage current density of the TiO2/Si sample was ∼10−2 A/cm2. The formation of the intermixed structure of TiO2 and CeO2 at the TiO2/CeO2 interface by RTA was thought to contribute to the reduction of the leakage current.
Properties of the HfO2/Hf-silicate/Si structure with the Hf-silicate layer which was formed by Hf metal deposition on Si and subsequent reaction of Hf with Si and oxygen during the HfO2 deposition were studied. Post-deposition N2 annealing reduced the equivalent oxide thickness (EOT) value and improved leakage characteristics of the HfO2/Hf-silicate/Si structure. The EOT value was reduced from 2.70 nm to 2.23 nm after annealing. At a proper voltage of 2.5 V, which was defined as the difference between the applied gate bias and the flat band voltage, the leakage current density of annealed HfO2/Hf-silicate/Si structure was 1.88×10-7 A/cm2 while that of as-formed HfO2/Hf-silicate/Si structure was 1.92×10-6 A/cm2. The breakdown field increased from 7.29 MV/cm to 9.71 MV/cm after annealing.
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