The study was conducted in Amhara region Maksegnit town north Gondar Ethiopia with the objective of investigating honey bee products marketing practice; opportunities and constraints. The data was collected from 40 households from four PAs by using pretested semi structure questionnaire. The collected data revealed that the major products of honey bee are honey (67.5%) and the rest (32.5%) colony itself. The major reason of keeping bees in the study area is for income source. The value obtained by ranking index revealed that middlemen, tej (a mead or honey wine) houses and retailer are the three major honey buyers with the index values of 0.30, 0.24 and 0.21, respectively. The price of honey is majorly governed by quality and color of the honey with index values of 0.4 and 0.3, respectively. The highest and the lowest price of honey in the study area was found to be 133.50 ± 6.222 and 69.25 ± 12.483 Ethiopian birr (ETB) for white and black honey, respectively. Lack of road, lack of materials for measuring the quantity of honey and the variation in the color of the honey were found to be the three major constraints of honey marketing with the index value of 0.16 of 0.143 and 0.141, respectively. The major challenge for marketing of bee colony is unavailability of organized marketing place. The Increment in number of unemployed youth, increment in price of honey and colony and the high demand of honey and colony in the area are the three major opportunities available to be engaged in beekeeping sector in the study area. To alleviate challenges of bee product and colony marketing, the government should provide important inputs and awareness should be created for the farmers.

Electroluminescence (EL) intensity from GaN nanostructures is reported as a function of different parameters, such excitation wavelength, number of the nanostructures, applied voltage, temperature and time. Quantum confinement model (QCM) is used to develop the model equation that describes the EL intensity as a function of size of the nanostructures. It is shown that as the number of nanostructures decreases EL intensity increases. The highly efficient EL intensity is obtained at low operating voltage (6V). It is observed that EL intensity decreases as the temperature increases and degrades with time.

In this paper, we studied the enhancement factor of local field for ellipsoidal metal composite, and optical induced bistability of metal/dielectric composites with in linear host matrixes. Using the calculated enhancement factor of local field and the cubic equation of the optical induced bistability of the composite material, the parameters of the bistability domain are calculated. The analytical and numerical results show that the enhancement factor of local field is extremely enhanced and the optical induced bistability increases its domain. It is shown that the local field in metal ellipsoidal particles with dielectric core in an external varying electric field has two maxima at two different frequencies. The second maximum becomes more important with increment in the metal fraction. At high metal fraction, the two bistability domains merge and form one entire bistability domain.

In this work we have studied the effect of interfacial layer on the refractive index, and propagation of waves in small spherical metal/dielectric composite separated by interfacial layers which is randomly embedded in a linear dielectric host matrix. The theoretical, and numerical descriptions are in terms of the interfacial factor (I) by incorporating Taylor expansion and Drude model. The result shows that both the interfacial layer property, and the percentage of the volume fraction of the metallic particles in the composite has an effect on the refractive index, and propagation of waves of the composite when the dielectric functions of the interfacial layer is more metal-like property than dielectric-like property.

The confinement properties of semiconductor nanostructures have promising potential in technological application. The main objective of this study is to describe the dependence of Photoluminescence (PL) intensity on different parameters like temperature, excitation wavelength, time and photon energy of GaAs quantum dots (QDs). The model equations are numerically analyzed and simulated with matlab and FORTRAN codes. The experimental fitted values and physical properties of materials are used as data source for our simulation. The result shows that at low temperature the peak is quite sharp, as temperature increases the PL intensity decreases and get quenched at particular thermal energy.