BACKGROUNDPreeclampsia is one of the leading causes of maternal and fetal morbidity and mortalities worldwide. Despite extensive research, the underlying cause of preeclampsia remains poorly understood. This study aimed to offer compelling evidence on the important risk factors of preeclampsia in Amhara region, Ethiopia.
Electroluminescence (EL) intensity from GaN nanostructures is reported as a function of different parameters, such excitation wavelength, number of the nanostructures, applied voltage, temperature and time. Quantum confinement model (QCM) is used to develop the model equation that describes the EL intensity as a function of size of the nanostructures. It is shown that as the number of nanostructures decreases EL intensity increases. The highly efficient EL intensity is obtained at low operating voltage (6V). It is observed that EL intensity decreases as the temperature increases and degrades with time.
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