An ion‐lattice quantum processor based on a two‐dimensional arrangement of linear surface traps is presented. The design features a tunable coupling between ions in adjacent lattice sites and a configurable ion‐lattice connectivity, allowing one, for example, to realize rectangular and triangular lattices with the same trap chip. Detailed trap simulations of a simplest‐instance ion array with 2 × 9 trapping sites are presented and the fabrication of a prototype device in an industrial facility is reported on. The design and the employed fabrication processes are scalable to larger array sizes. Trapping of ions in rectangular and triangular lattices and transport of a 2 × 2 ion‐lattice over one lattice period are demonstrated.
The detection of infrared radiation is of great interest for a wide range of applications, such as absorption sensing in the infrared spectral range. In this work, we present a CMOS compatible pyroelectric detector which was devised as a mid-infrared detector, comprising aluminium nitride (AlN) as the pyroelectric material and fabricated using semiconductor mass fabrication processes. To ensure thermal decoupling of the detector, the detectors are realized on a Si3N4/SiO2 membrane. The detectors have been tested at a wavelength close to the CO2 absorption region in the mid-infrared. Devices with various detector and membrane sizes were fabricated and the influence of these dimensions on the performance was investigated. The noise equivalent power of the first demonstrator devices connected to a readout circuit was measured to be as low as 5.3 × 10 − 9 W / Hz .
The field of mid-infrared (MIR) plasmonics has shown great potential applications in spectroscopic sensing, infrared light sources and detectors. MIR plasmonic materials that are compatible with common fabrication processes may enable cost-effective and reliable plasmonic device platforms. In this work, we examined aluminium metal (Al), gold-tin (AuSn) and titanium-tungsten (TiW) alloys regarding their usability for surface plasmon polariton (SPP) excitation in the MIR regime using a grating configuration. The angle dependence and the influence of varying depths of gratings were numerically and experimentally studied for the chosen materials. The structures were fabricated on eight-inch silicon (Si) substrates and characterized with a free-beam reflection measurement setup in the MIR regime. The fabricated gratings show narrow resonance dips, which are in good agreement with the simulations, revealing that Al, AuSn and TiW alloys are reliable plasmonic materials for MIR plasmonic devices.
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