A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride

Ranacher, Christian; Consani, Cristina; Tortschanoff, A.; Rauter, Lukas; Holzmann, Dominik; Fleury, Clément; Stocker, Gerald; Fant, A.; Schaunig, H.; Irsigler, Peter; Grille, Thomas; Jakoby, Bernhard

doi:10.3390/s19112513

Cited by 22 publications

(16 citation statements)

References 15 publications

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“…The performance of the 4 detectors are summarized in Table I. Our best performing pyroelectric Detector 2 ( A = 0.29 mm 2 ) has responsivity of 2.94 × 10 −5 A/W, NEP = 8.87 × 10 −9 W/ √ Hz and D * = 6.04 × 10 6 cm √ Hz W. The results are comparable with reported AlN pyroelectric detectors [24]. Although the specific detectivity of the best performing AlN pyroelectric detector is still around 2 orders [36] behind commercial LiTaO 3 pyroelectric detectors, this gap could be closed by doping the AlN pyroelectric material to increase its pyroelectric coefficient or by replacing the absorber to push absorption up to > 90%.…”

Section: Resultssupporting

confidence: 73%

“…To obtain maximum output signal, we also consider the pyroelectric current equation [24], [33] defined as follows:…”

Section: Design Considerationsmentioning

confidence: 99%

“…Most recently, there have been reports on progress of integrated mid-IR optical gas sensors [21], leveraging on the absorption characteristics of gas when interacting with light at certain wavelengths for miniature, low cost and low power devices. Specific to AlN pyroelectric detectors, there have been recent demonstrations on AlN pyroelectric near-IR [22] and mid-IR to far-IR [23] detectors, and AlN pyroelectric mid-IR detector for carbon dioxide (CO 2 ) gas sensing [24]. As most gases absorb electromagnetic radiation at different IR wavelengths, pyroelectric detector could be used towards detection of gas and its concentration by analyzing the electrical output signal observed at the gas absorption wavelength.…”

mentioning

confidence: 99%

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Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

Zhang

et al. 2020

J. Microelectromech. Syst.

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CMOS compatibility and 8-inch manufacturability have been highly desired in MEMS technology. In this article, we demonstrate a MEMS pyroelectric IR detector using CMOS compatible AlN and 8-inch semiconductor wafer technology. This AlN pyroelectric detector detects IR over wavelength ranging from 5 µm to 14 µm. In addition, this detector is designed to have added mechanical stiffness for improved device integrity. The detectors are fabricated with different sensing area dimensions to compare their performance. The best performing detector has an NEP ∼ 8.87 × 10-9 W/ √ Hz and D * ∼ 6.04 × 10 6 cm √ Hz/W. These pyroelectric detectors are designed and built with the consideration to enable ease of monolithic integration with other components to form an integrated gas sensor system. This includes enabling detection of illumination from the front side and using an absorber stack that consists of CMOS dielectric layers. Subsequently, they will form a crucial part of the architectures for miniature photonics-based gas sensors. Their performance is a first step towards 8-inch wafer level CMOS-compatible manufacturable photonics gas sensors.

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Section: Resultssupporting

confidence: 73%

“…To obtain maximum output signal, we also consider the pyroelectric current equation [24], [33] defined as follows:…”

Section: Design Considerationsmentioning

confidence: 99%

mentioning

confidence: 99%

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Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

Zhang

et al. 2020

J. Microelectromech. Syst.

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“…While many photopyroelectric detectors have been demonstrated to measure electromagnetic radiations over a broad spectral range from visible to terahertz, [ 8 ] narrowband photopyroelectric devices are highly desired as they are able to respond to infrared radiation in a specific wavelength range. [ 9–12 ]…”

Section: Introductionmentioning

confidence: 99%

Tunable Resonant‐Photopyroelectric Detector Using Chalcogenide−Metal−Fluoropolymer Nanograting

Monshat

Qian

et al. 2021

Advanced Optical Materials

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Pyroelectric detectors are often broadband and require external filters for wavelength‐specific applications. This paper reports a tunable, narrowband, and lightweight pyroelectric infrared detector built upon a flexible membrane of As2S3−Ag−P(VDF‐TrFE) with subwavelength grating, which is capable of both on‐chip filtering and photopyroelectric energy conversion. The top surface of this hybrid membrane is a corrugated As2S3−Ag film contributing to narrowband light absorption in the near‐infrared (NIR) regime, and the bottom part is a polyvinylidene fluoride‐trifluoroethylene (PVDF‐TrFE) membrane for the conversion of the absorbed light to an electrical signal. Uniquely, applying a bias voltage to the PVDF‐TrFE membrane enables the tuning of the device's absorption and pyroelectric characteristics owing to the piezoelectrically induced mechanical bending. The resonator exhibited a resonant absorption coefficient of 80% and a full‐width‐half‐maximum of 15 nm within the NIR, a responsivity of 1.4 mV mW−1, and an equivalent noise power of 13 µW Hz−1/2 at 1560 nm. By applying a 15‐V bias to the PVDF‐TrFE membrane, the absorption coefficient decreased to 18% due to the change in the grating period and incident angle. The narrowband and tunable features of the As2S3−Ag−P(VDF‐TrFE) pyroelectric detector will benefit a variety of potential applications in sensors, optical spectroscopy, and imaging.

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“…These surface effects allow monitoring different physical or chemical properties at material interfaces in a non-invasive way [2][3][4][5] or even several physical properties at once [6,7]. Besides such sensing applications, the list of use-cases in the field of plasmonic research in the mid-and near-infrared region also covers waveguides [8], selective thermal emitters [9,10] and infrared (IR) detectors [11]. For all mentioned applications, the performance directly depends on the physical properties of the used materials and the structural geometry.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Narrow SPP Generation from Ag Grating

Stocker

Spettel

Dao

et al. 2021

Sensors

Self Cite

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In this study, we investigate the potential of one-dimensional plasmonic grating structures to serve as a platform for, e.g., sensitive refractive index sensing. This is achieved by comparing numerical simulations to experimental results with respect to the excitation of surface plasmon polaritons (SPPs) in the mid-infrared region. The samples, silver-coated poly-silicon gratings, cover different grating depths in the range of 50 nm–375 nm. This variation of the depth, at a fixed grating geometry, allows the active tuning of the bandwidth of the SPP resonance according to the requirements of particular applications. The experimental setup employs a tunable quantum cascade laser (QCL) and allows the retrieval of angle-resolved experimental wavelength spectra to characterize the wavelength and angle dependence of the SPP resonance of the specular reflectance. The experimental results are in good agreement with the simulations. As a tendency, shallower gratings reveal narrower SPP resonances in reflection. In particular, we report on 2.9 nm full width at half maximum (FWHM) at a wavelength of 4.12 µm and a signal attenuation of 21%. According to a numerical investigation with respect to a change of the refractive index of the dielectric above the grating structure, a spectral shift of 4122nmRIU can be expected, which translates to a figure of merit (FOM) of about 1421 RIU−1. The fabrication of the suggested structures is performed on eight-inch silicon substrates, entirely accomplished within an industrial fabrication environment using standard microfabrication processes. This in turn represents a decisive step towards plasmonic sensor technologies suitable for semiconductor mass-production.

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A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride

Cited by 22 publications

References 15 publications

Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

Tunable Resonant‐Photopyroelectric Detector Using Chalcogenide−Metal−Fluoropolymer Nanograting

Ultra-Narrow SPP Generation from Ag Grating

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