Semiconductor alloys of aluminum gallium arsenide (AlGaAs) exhibit strong second-order optical nonlinearities. This makes them prime candidates for the integration of devices for classical nonlinear optical frequency conversion or photon-pair production, for example, through the parametric downconversion (PDC) process. Within this material system, Bragg-reflection waveguides (BRW) are a promising platform, but the specifics of the fabrication process and the peculiar optical properties of the alloys require careful engineering. Previously, BRW samples have been mostly derived analytically from design equations using a fixed set of aluminum concentrations. This approach limits the variety and flexibility of the device design. Here, we present a comprehensive guide to the design and analysis of advanced BRW samples and show how to automatize these tasks. Then, nonlinear optimization techniques are employed to tailor the BRW epitaxial structure towards a specific design goal. As a demonstration of our approach, we search for the optimal effective nonlinearity and mode overlap which indicate an improved conversion efficiency or PDC pair production rate. However, the methodology itself is much more versatile as any parameter related to the optical properties of the waveguide, for example the phasematching wavelength or modal dispersion, may be incorporated as design goals. Further, we use the developed tools to gain a reliable insight in the fabrication tolerances and challenges of real-world sample imperfections. One such example is the common thickness gradient along the wafer, which strongly influences the photon-pair rate and spectral properties of the PDC process. Detailed models and a better understanding of the optical properties of a realistic BRW structure are not only useful for investigating current samples, but also provide important feedback for the design and fabrication of potential future turn-key devices.

Semiconductor Bragg-reflection waveguides are well-established sources of correlated photon pairs as well as promising candidates for building up integrated quantum optics devices. Here, we use such a source with optimized non-linearity for preparing time-bin entangled photons in the telecommunication wavelength range. By taking advantage of pulsed state preparation and efficient free-running single-photon detection, we drive our source at low pump powers, which results in a strong photon-pair correlation. The tomographic reconstruction of the state's density matrix reveals that our source exhibits a high degree of entanglement. We extract a concurrence of 88.9 ± 1.8% and a fidelity of 94.2 ± 0.9% with respect to a Bell state.

An ion‐lattice quantum processor based on a two‐dimensional arrangement of linear surface traps is presented. The design features a tunable coupling between ions in adjacent lattice sites and a configurable ion‐lattice connectivity, allowing one, for example, to realize rectangular and triangular lattices with the same trap chip. Detailed trap simulations of a simplest‐instance ion array with 2 × 9 trapping sites are presented and the fabrication of a prototype device in an industrial facility is reported on. The design and the employed fabrication processes are scalable to larger array sizes. Trapping of ions in rectangular and triangular lattices and transport of a 2 × 2 ion‐lattice over one lattice period are demonstrated.