Topologically protected fermionic quasiparticles appear in metals, where band degeneracies occur at the Fermi level, dictated by the band structure topology. While in some metals these quasiparticles are direct analogues of elementary fermionic particles of the relativistic quantum field theory, other metals can have symmetries that give rise to quasiparticles, fundamentally different from those known in high-energy physics. Here, we report on a new type of topological quasiparticles-triple point fermions-realized in metals with symmorphic crystal structure, which host crossings of three bands in the vicinity of the Fermi level protected by point group symmetries. We find two topologically different types of triple point fermions, both distinct from any other topological quasiparticles reported to date. We provide examples of existing materials that host triple point fermions of both types and discuss a variety of physical phenomena associated with these quasiparticles, such as the occurrence of topological surface Fermi arcs, transport anomalies, and topological Lifshitz transitions.

We present a novel route to realizing topological superconductivity using magnetic flux applied to a full superconducting shell surrounding a semiconducting nanowire core. In the destructive Little-Parks regime, reentrant regions of superconductivity are associated with integer number of phase windings in the shell. Tunneling into the core reveals a hard induced gap near zero applied flux, corresponding to zero phase winding, and a gapped region with a discrete zero-energy state around one applied flux quantum, Φ0 = h/2e, corresponding to 2π phase winding. Theoretical analysis indicates that in the presence of radial spin-orbit coupling in the semiconductor, the winding of the superconducting phase can induce a transition to a topological phase supporting Majorana zero modes. Realistic modeling shows a topological phase persisting over a wide range of parameters, and reproduces experimental tunneling conductance data. Further measurements of Coulomb blockade peak spacing around one flux quantum in full-shell nanowire islands shows exponentially decreasing deviation from 1e periodicity with device length, consistent with Majorana modes at the ends of the nanowire. arXiv:2003.13177v1 [cond-mat.mes-hall]

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schrödinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Landé g factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.

The 7.8 eV nuclear isomer transition in 229 thorium has been suggested as a clock transition in a new type of optical frequency standard. Here we discuss the construction of a 'solid-state nuclear clock' from thorium nuclei implanted into single crystals transparent in the vacuum ultraviolet range. We investigate crystal-induced line shifts and broadening effects for the specific system of calcium fluoride. At liquid nitrogen temperatures, the clock performance will be limited by decoherence due to magnetic coupling of the thorium nuclei to neighboring nuclear moments, ruling out the commonly used Rabi or Ramsey interrogation schemes. We propose clock stabilization based on a fluorescence spectroscopy method and present optimized operation parameters. Taking advantage of the large number of quantum oscillators under continuous interrogation, a fractional instability level of 10 −19 might be reached within the solid-state approach.

We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems. gate induced electric fields. Due to the change in coupling, the renormalization of material parameters is altered, as evidenced by a change in the effective g-factor of the hybrid system. Furthermore, the electric field is shown to affect the spin-orbit interaction, revealed by a change in the level repulsion between Andreev states. Our experimental findings are corroborated by numerical simulations. Experimental set-upWe have performed tunneling spectroscopy experiments on four InSb-Al hybrid nanowire devices, labeled A-D, all showing consistent behavior. The nanowire growth procedure is described in [20]. A scanning electron micrograph (SEM) of device A is shown in figure 1(a). Figure 1(b) shows a schematic of this device and the measurement set-up. For clarity, the wrap-around tunnel gate, tunnel gate dielectric and contacts have been removed on one side. A normal-superconductor (NS) junction is formed between the part of the nanowire covered by a thin shell of aluminum (10 nm thick, indicated in green, S), and the Cr /Au contact (yellow, N). The transmission of the junction is controlled by applying a voltage V Tunnel to the tunnel gate (red), galvanically isolated from the nanowire by 35 nm of sputtered SiN x dielectric. The electric field is induced by a global back gate voltage V BG , except in the case of device B, where this role is played by the side gate voltage V SG . Further details on device fabrication and design are included in appendices A and B. To obtain information about the density of states (DOS) in the proximitized nanowire, we measure the differential conductance dI/dV Bias as a function of applied bias voltage V Bias . In the following, we will label this quantity as dI/dV for brevity. A magnetic field is applied along the nanowire direction (x-axis in figures 1(b), (c)). All measurements are performed in a dilution refrigerator with a base temperature of 20 mK. Theoretical modelThe device geometry used in the simulation is shown in figure 1(c). We consider a nanowire oriented along the x-direction, with a hexagonal cross-section in the yz-plane. The hybrid superconductor-nanowire system is described by the Bogoliubov-de Gennes (BdG) Hamiltonian

We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. All the key physical ingredients of these systems -orbital effect of magnetic field, superconducting proximity effect and electrostatic environment -are taken into account on equal footing in a realistic device geometry. As a model system, we consider indium arsenide (InAs) nanowires with epitaxial aluminum (Al) shell, which is one of the most promising platforms for Majorana zero modes. We demonstrate qualitative and quantitative agreement of the obtained results with the existing experimental data. Finally, we characterize the topological superconducting phase emerging in a finite magnetic field and calculate the corresponding topological phase diagram. arXiv:1810.04180v2 [cond-mat.supr-con]

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAs1−xSbx have spin splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at x = 0.5, which has an inverted band ordering and realizes a novel type of a topological semimetal with triple degeneracy points in the bulk spectrum that produce topological surface Fermi arcs. Experimentally achievable strains can drive this compound either into a topological insulator phase, or restore the normal band ordering making the CuPt-ordered InAs0.5Sb0.5 a semiconductor with a large intrinsic linear in k bulk spin splitting.In recent years, a range of topological phases have been realized in materials, ranging from topological insulators [1, 2] (TIs) and semimetals [3][4][5][6] (TSMs) to superconductors [7, 8] (TSCs). The non-trivial topology of the ground state wavefunctions in these phases causes a variety of phenomena in such materials ranging from topologically protected metallic surface or edge states in TIs [1, 2] and Fermi arcs and anomalous magnetotransport in TSMs [4,[9][10][11], to quasiparticles with nonAbelian particle statistics [12][13][14][15][16][17][18][19] in TSCs, which could be used for topological quantum computation [20,21].Arguably the simplest scheme for realizing nonAbelian statistics in a solid-state device is based on manipulating Majorana zero modes (MZMs) in networks of semiconductor wires. MZMs were predicted to appear at the ends of spin-orbit coupled wires subject to a parallel magnetic field, proximity coupled to an s-wave superconductor. Experimental observations, consistent with the theory, were reported for InAs and InSb zincblende nanowires [19,[22][23][24].The stability of MZMs in such a setup depends greatly on the size of the spin-orbit splitting (SOS) of the conduction band. SOS is very small in bulk zincblende semiconductors [25] and the realization of the MZMs thus relies on the externally induced Rashba SOS [26], which is estimated to be of the order of 1 meV [27,28]. This value is very small compared to the bulk splitting in some recently discovered compounds [29][30][31][32]. However, most of these materials are not suitable for realizing MZMs within the above scenario, while for others such experiments appear to be challenging. It is thus desirable to understand if large values of bulk SOS can be achieved within the III-V materials class, used in most experiments at this time. A bulk SOS dom...

Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Landé g-factor, several times larger than the bulk value -contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an L • S coupling in higher subbands leads to an enhancement of the g-factor of an order of magnitude or more for small effective mass semiconductors. We validate our theoretical finding with simulations of InAs and InSb, showing that the effect persists even if cylindrical symmetry is broken. A huge anisotropy of the enhanced g-factors under magnetic field rotation allows for a straightforward experimental test of this theory.