2019
DOI: 10.1103/physrevb.99.245408
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Unified numerical approach to topological semiconductor-superconductor heterostructures

Abstract: We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. All the key physical ingredients of these systems -orbital effect of magnetic field, superconducting proximity effect and electrostatic environment -are taken into account on equal footing in a realistic device geometry. As a model system, we consider indium arsenide (InAs) nanowires with epitaxial aluminum (Al) shell, which is one of the most promising platforms for Majorana zero modes. We demonstrate qualitati… Show more

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Cited by 97 publications
(132 citation statements)
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References 90 publications
(173 reference statements)
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“…2(b) and (c). The chosen surface charge values are consistent with experimental estimates for InAs 39 and have been used in previous theoretical studies of Majorana devices 44,45 . As expected, the main effect of the (positive) surface charge is to increase the overall number of occupied subbands.…”
Section: Resultssupporting
confidence: 63%
See 1 more Smart Citation
“…2(b) and (c). The chosen surface charge values are consistent with experimental estimates for InAs 39 and have been used in previous theoretical studies of Majorana devices 44,45 . As expected, the main effect of the (positive) surface charge is to increase the overall number of occupied subbands.…”
Section: Resultssupporting
confidence: 63%
“…Following Ref. 44 , we model this surface charge as a uniform layer of (positive) charge of thickness on the nanowire surfaces other than the semiconductor-superconductor interface (see Fig. 1).…”
Section: Device and Modelingmentioning
confidence: 99%
“…Recent advances in the modelling of semiconductorsuperconductor hybrid structures have led to more accurate simulations of proximitized nanowires [34,35,46,47]. Here, the essence of our approach is to integrate out the superconductor into self-energy boundary conditions, as discussed in [39].…”
Section: Realistic Simulationsmentioning
confidence: 99%
“…We solve for the electrostatic potential in a separate step using the Thomas-Fermi approximation analog to Ref. [47]. In the semiconductor (InAs) we take m semi = 0.026 m 0 , E F,semi = 0 and g semi = 14.7 [75].…”
Section: Numerical Simulationsmentioning
confidence: 99%
“…According to the literature (see for instance Ref. 56), the orbital effects are important when the electron's wave function is spread across the wire's section, especially when it has a ringlike shape. In this case, the electrons circulate around the magnetic field that points along the wire and interference orbital effects appear.…”
Section: A Alternative Superlattice Configurationmentioning
confidence: 99%