We perform tunneling measurements on indium antimonide nanowire/superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we seek an alternative explanation for the observed zero-bias peaks. With the help of a self-consistent Poission-Schrödinger multiband model developed in parallel, we identify several families of trivial subgap states which overlap and interact, giving rise to a crowded spectrum near zero energy and zero-bias conductance peaks in experiments. These findings advance the search for Majorana bound states through improved understanding of broader phenomena found in superconductor-semiconductor systems.

We propose a method for solving the Schrödinger-Poisson problem that can be efficiently implemented in realistic 3D tight-binding models of semiconductor-based Majorana devices. The method is based on two key ideas: (i) For a given geometry, the Poisson problem is only solved once (for each local orbital) and the results are stored as an interaction tensor; using this Green's function scheme, the Poisson component of the iteration procedure is reduced to a few simple summations. (ii) The 3D problem is mapped into an effective multi-orbital 1D problem with molecular orbitals calculated self-consistently as the transverse modes of an infinite wire with the same electrostatic potential as the local electrostatic potential of the finite 3D device. These two ideas considerably simplify the numerical complexity of the full 3D Schrödinger-Poisson problem for the nanowire, enabling a tractable effective theory with predictive power. To demonstrate the capabilities of our approach, we calculate the response of the system to an external magnetic field, the dependence of the effective chemical potential on the work function difference, and the dependence of the effective semiconductor-superconductor coupling on the applied gate potential. We find that, within a wide range of parameters, different low-energy bands are characterized by similar effective couplings, which results in induced gap features characterized by a single energy scale. We also find that electrostatic effects are responsible for a partial suppression of the Majorana energy splitting oscillations. Finally, we show that a position-dependent work function difference can produce a non-homogeneous effective potential that is not affected by the screening due to the superconductor and is only partially suppressed by the charge inside the wire. In turn, this potential can induce trivial low-energy states that mimic the phenomenology of Majorana zero modes. Thus any position-dependent work function difference (even at the 1% level) along the nanowire must be avoided through carefully engineered semiconductor-superconductor interfaces.

Recent tunneling conductance measurements on semiconductor-superconductor nanowires find zero-bias peaks to be ubiquitous across wide ranges of chemical potential and Zeeman energy 1 . Motivated by this, we demonstrate that topologically-trivial Andreev abound states (ABSs) pinned near zero energy are produced rather generically in inhomogeneous systems with multi-band occupancy in the presence of inter-band coupling. We first investigate the inter-band coupling mechanism responsible for the pinning within a multi-band 1D toy model, then we confirm the findings using a 3D Schrödinger-Poisson approach that incorporates the geometric and electrostatic details of the actual device. Our analysis shows that level-repulsion generated by inter-band coupling can lead to a rather spectacular pinning of the lowest-energy mode near zero energy in systems (or regions) characterized by very-short length scales (∼ 100 nm). We show that level repulsion between the lowest energy levels can mimic the gap opening feature (simultaneous with the emergence of a near-zero energy mode) predicted to occur in Majorana hybrid systems. We also demonstrate that nearly-zero bias differential conductance features exhibiting particle-hole asymmetry are due to the presence of (topologically-trivial) ABSs pinned near zero-energy by level repulsion, not to Majorana zero modes, quasi-Majoranas, or any other low-energy mode that involves (partially) separated Majorana bound states. Our findings demonstrate the importance of understanding in detail multi-band physics and electrostatic effects in the context of the ongoing search for Majorana modes in semiconductor-superconductor heterostructures.

Subband occupancy (i.e. the number of occupied subbands or energy levels in the semiconductor) is a key physical parameter characterizing the topological properties of superconductor-semiconductor hybrid systems in the context of the search for non-Abelian Majorana zero modes. We theoretically study the subband occupation of semiconductor nanowire devices as function of the applied gate potential, the semiconductor-superconductor (SM-SC) work function difference, and the surface charge density by solving self-consistently the Schrödinger-Poisson equations for the conduction electrons of the semiconductor nanowire. Realistic surface charge densities, which are responsible for band bending, are shown to significantly increase the number of occupied subbands, making it difficult or impossible to reach a regime where only a few subbands are occupied. We also show that the energy separation between subbands is significantly reduced in the regime of many occupied subbands, with highly detrimental consequences for the realization and observation of robust Majorana zero modes. As a consequence, the requirements for the realization of robust topological superconductivity and Majorana zero modes should include a low value of the chemical potential, consistent with the occupation of only a few subbands. Finally, we show that the local density of states on the exposed nanowire facets provides a powerful tool for identifying a regime with many occupied subbands and is capable of providing additional critical information regarding the feasibility of Majorana physics in semiconductor-superconductor devices. In our work, we address both InAs/Al and InSb/Al superconductor-nanowire hybrid systems of current experimental interest.arXiv:1910.04362v1 [cond-mat.mes-hall]

No abstract