Majorana zero-modes-a type of localized quasiparticle-hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e/h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e/h, with a recent observation of a peak height close to 2e/h. Here we report a quantized conductance plateau at 2e/h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

Solar powered hydrogen evolution reaction (HER) is one of the key reactions in solar-to-chemical energy conversion. It is desirable to develop photocathodic materials that exhibit high activity toward photoelectrochemical (PEC) HER at more positive potentials because a higher potential means a lower overpotential for HER. In this work, the Cu2O/CuO bilayered composites were prepared by a facile method that involved an electrodeposition and a subsequent thermal oxidation. The resulting Cu2O/CuO bilayered composites exhibited a surprisingly high activity and good stability toward PEC HER, expecially at high potentials in alkaline solution. The photocurrent density for HER was 3.15 mA·cm−2 at the potential of 0.40 V vs. RHE, which was one of the two highest reported at the same potential on copper-oxide-based photocathode. The high photoactivity of the bilayered composite was ascribed to the following three advantages of the Cu2O/CuO heterojunction: (1) the broadened light absorption band that made more efficient use of solar energy, (2) the large space-charge-region potential that enabled a high efficiency for electron-hole separation, and (3) the high majority carrier density that ensured a faster charge transportation rate. This work reveals the potential of the Cu2O/CuO bilayered composite as a promising photocathodic material for solar water splitting.

Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor 1,2 . To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a wellcontrolled braiding operation 3-8 . Essential hardware for braiding is a network of singlecrystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands.Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a 2 proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.Majorana Zero Modes (MZMs) are predicted to emerge once a superconductor (SC) is coupled to a semiconductor nanowire (NW) with a strong spin-orbit interaction (SOI) in an external magnetic field 1,2 . InSb NWs are a prime choice for this application due to the large Landé g-factor (~50) and strong Rashba SOI 9 , crucial for realization of MZMs. In addition, InSb nanowires generally show high mobility and ballistic transport [10][11][12] . Indeed, signatures of Majorana zero modes (MZMs) have been detected in hybrid superconductor-semiconductor InSb and InAs NW systems 11,[13][14][15] . Multiple schemes for topological quantum computing based on braiding of MZMs have been reported, all employing hybrid NW networks 3-8 .Top-down fabrication of InSb NW networks is an attractive route towards scalability 16 , however, the large lattice mismatch between InSb and insulating growth substrates limits the crystal quality. An alternative approach is bottom-up synthesis of out-of-plane NW networks which, due to their large surface-to-volume ratio, effectively relieve strain on their sidewalls, enabling the growth of single-crystalline NWs on highly lattice-mismatched substrates [17][18][19] .Recently, different schemes have been reported for merging NWs into networks [20][21][22] .Unfortunately, these structures are either not single-crystalline, due to a mismatch of the crystal structure of the wires with that of the substrate (i.e. hexagonal NWs on a cubic substrate) 22 , or the yield is low due to the limited control over the multiple accessible growth directions (the yield decreases with the number of junctions in the network) 23 ....

We examine the long-wavelength current response in anisotropic superconductors and show how the field-dependence of the Meissner penetration length can be used to detect the structure of the order parameter. Nodes in the excitation gap lead to a nonlinear current-velocity constitutive equation at low temperatures which is distinct for each symmetry class of the order parameter. The effective Meissner penetration length is linear in H and exhibits a characteristic anisotropy for fields in the ab-plane that is determined by the positions of the nodes in momentum space. The nonlinear current-velocity relation also leads to an intrinsic magnetic torque for in-plane fields that are not parallel to a nodal or antinodal direction. The torque scales as H 3 for T → 0 and has a characteristic angular dependence. We analyze the effects of thermal excitations, impurity scattering and geometry on the current response of a d x 2 −y 2 superconductor, and discuss our results in light of recent measurements of the low-temperature penetration length and in-plane magnetization of single-crystals of Y Ba2Cu3O 7−δ and LuBa2Cu3O 7−δ .

The number of electrons in small metallic or semiconducting islands is quantised. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting–semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS, and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e., compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes.

We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems. gate induced electric fields. Due to the change in coupling, the renormalization of material parameters is altered, as evidenced by a change in the effective g-factor of the hybrid system. Furthermore, the electric field is shown to affect the spin-orbit interaction, revealed by a change in the level repulsion between Andreev states. Our experimental findings are corroborated by numerical simulations. Experimental set-upWe have performed tunneling spectroscopy experiments on four InSb-Al hybrid nanowire devices, labeled A-D, all showing consistent behavior. The nanowire growth procedure is described in [20]. A scanning electron micrograph (SEM) of device A is shown in figure 1(a). Figure 1(b) shows a schematic of this device and the measurement set-up. For clarity, the wrap-around tunnel gate, tunnel gate dielectric and contacts have been removed on one side. A normal-superconductor (NS) junction is formed between the part of the nanowire covered by a thin shell of aluminum (10 nm thick, indicated in green, S), and the Cr /Au contact (yellow, N). The transmission of the junction is controlled by applying a voltage V Tunnel to the tunnel gate (red), galvanically isolated from the nanowire by 35 nm of sputtered SiN x dielectric. The electric field is induced by a global back gate voltage V BG , except in the case of device B, where this role is played by the side gate voltage V SG . Further details on device fabrication and design are included in appendices A and B. To obtain information about the density of states (DOS) in the proximitized nanowire, we measure the differential conductance dI/dV Bias as a function of applied bias voltage V Bias . In the following, we will label this quantity as dI/dV for brevity. A magnetic field is applied along the nanowire direction (x-axis in figures 1(b), (c)). All measurements are performed in a dilution refrigerator with a base temperature of 20 mK. Theoretical modelThe device geometry used in the simulation is shown in figure 1(c). We consider a nanowire oriented along the x-direction, with a hexagonal cross-section in the yz-plane. The hybrid superconductor-nanowire system is described by the Bogoliubov-de Gennes (BdG) Hamiltonian

We exploited the oxide shell structure to explore the structure confinement effect on the nickel silicide growth in one-dimensional nanowire template. The oxide confinement structure is similar to the contact structure (via hole) in the thin film system or nanodevices passivated by oxide or nitride film. Silicon nanowires in direct contact with nickel pads transform into two phases of nickel silicides, Ni31Si12 and NiSi2, after one-step annealing at 550 °C. In a bare Si nanowire during the annealing process, NiSi2 grows initially through the nanowire, followed by the transformation of NiSi2 into the nickel-rich phase, Ni31Si12 starting from near the nickel pad. Ni31Si12 is also observed under the nickel pads. Although the same phase transformations of Si to nickel silicides are observed in nanowires with oxide confinement structure, the growth rate of nickel silicides, Ni31Si12 and NiSi2, is retarded dramatically. With increasing oxide thickness from 5 to 50 nm, the retarding effect of the Ni31Si12 growth and the annihilation of Ni2Si into the oxide confined-Si is clearly observed. Ni31Si12 and Ni2Si phases are limited to grow into the Si/SiOx core-shell nanowire as the shell thickness reaches 50 nm. It is experimental evidence that phase transformation is influenced by the stressed structure at nanoscale.

Hydrous iridium oxide (IrOx) nanoparticles (NPs) with an average diameter of 1.7 ± 0.3 nm were prepared via photochemical hydrolysis of iridium chloride in alkaline medium at room temperature. The photoinduced hydrolysis was monitored by time-dependent ultraviolet-visible (UV-vis) spectroscopy, and the effects of the incident wavelength and irradiation time on the production of IrOx NPs were systematically investigated. It was found that UV-vis irradiation is crucial for the generation of IrOx NPs during the hydrolysis of IrCl3, and once the irradiation was turned off, the hydrolysis reaction stopped immediately. The production rate of IrOx NPs greatly depended on the incident wavelength. There is a critical wavelength of 500 nm for the hydrolysis reaction, and IrOx NPs can only be produced under the illumination with an incident wavelength shorter than 500 nm. Moreover, the shorter the incident wavelength, the faster the growth rate of IrOx NPs. The obtained IrOx NPs were highly stable during two months of storage at 4 °C. The Ir/IrOx nanocomposites were prepared by surface reduction of IrOx NPs with NaBH4. The microstructure of the Ir/IrOx composite was characterized by transmission electron microscopy (TEM), and the presence of zero-valence Ir was confirmed by the X-ray diffraction (XRD) result. The Ir/IrOx nanocomposite exhibited good catalytic activity and high recycling stability toward the reduction of 4-nitrophenol. The catalytic activity per unit surface area of the Ir/IrOx composite catalyst was increased by a factor of 15 compared to that of pure Ir catalyst. The presence of the Ir/IrOx interfaces in the composite catalyst is believed to be responsible for the high activity.