An instrumental system is described that combines an apparatus for pulsed laser deposition (PLD) with a vacuum “suitcase” for transport of air-sensitive compounds. Laser ablation, plume diagnostics, and thin-film deposition are readily accomplished through a flexible design. The PLD apparatus consists of two cubes coupled via a bellows assembly and whose distance is easily changed pneumatically. For both the PLD apparatus and the vacuum suitcase, compact-design considerations have been implemented. Consequently, the footprint of the PLD apparatus is relatively small, and the vacuum suitcase can be transported easily between sites.
We report on a novel experimental approach for thin-film deposition via pulsed laser ablation. A combination of design features including the incorporation of original sample manipulation methods as well as enhanced analytical capabilities allow for experimental control and flexibility for thin-film deposition studies of a variety of materials. Here, the application is illustrated with a study of 532 nm pulsed laser ablation and subsequent deposition of CdTe.Conditions have been found that produce a mildly energetic ablation plume, and the average kinetic energies for the neutral and ionic ablation species in the plume have been determined to be approximately 2 and 11 eV, respectively. It has been shown that in the presence of an electric field the ionic species can be diverted away from the detector (and subsequently from the eventual deposit). Thin film deposits clearly reveal an increase in the number of sub-micron particles when direct ablation ions contribute to the deposition. The possibility for extraction of ablation ions and preparation of ablation plumes of neutrals only has been clearly demonstrated.
The 308 nm laser ablation of InSb and GaSb has been investigated with the goal being to exert macroscopic control over the ablation plume. By taking advantage of the lower ionization potential of the group III element, In or Ga can be selectively ionized within the ablation plume by a 193 nm (6.4 eV) photon. The ionized species are removed from the plume with an electric field. As shown by x-ray photoelectron spectra, films subsequently deposited are diminished in In or Ga. A three-cycle deposition study demonstrates that a depleted layer of InSb can be deposited between two nondepleted layers of InSb.
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