In this paper, we prepared amorphous gallium-incorporated tin oxide (a-SnGaO) thin-film transistors (TFTs) with respect to various Ga contents and annealing temperatures. All TFTs exhibit excellent switching characteristics. As the gallium content increases, the off-state current of the a-SnGaO TFTs decreases, the threshold voltage (V th ) shifts towards positive voltage, and the subthreshold swing (S.S.) improves. The optimal gallium content is 20 at%, the corresponding saturation mobility of a-SnGaO TFTs is 5.2 cm 2 V −1 s −1 , the threshold voltage is −2.3 V, and the S.S. is 0.7 V dec. −1 . The switching ratio is 1.5 × 10 6 . Furthermore, we investigated the effect of annealing temperature on the electrical properties of a-SnGaO TFTs. It was found that as the annealing temperature increases, the mobility of a-SnGaO TFTs increases and the S.S. improves, which is greatly due to the increase of free electrons and reduction of defect states in the channel layer.
Amorphous europium-doped tin oxide (a-SnEuO) thin film transistors (TFTs) with a wide bandgap of 3.87 eV were prepared by sol-gel method. The results indicate that as Eu content increases, the off-state current of the a-SnEuO TFTs decreases, the threshold voltage (V th ) shifts in the positive direction and the subthreshold swing (S.S.) is also improved. When Eu content is 30 at%, the mobility of a-SnEuO TFTs is 4.5 cm 2 V −1 s −1 , with an S.S. of 0.8 V dec −1 . and a switching ratio of 9.5 × 10 6 . Our study indicates Eu-doped SnO 2 TFT is expected to be the next generation of display technology.
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