Heteroepitaxial films of Ga 2 O 3 were grown on c-plane sapphire (0001). The stable phase β-Ga 2 O 3 was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures between 500 • C and 850 • C. Metastable α-and ε-phases were grown when using the halide vapor phase epitaxy (HVPE) technique, at growth temperatures between 650 • C and 850 • C, both separately and in combination. XTEM revealed the better lattice-matched α-phase growing semi-coherently on the substrate, followed by ε-Ga 2 O 3 . The epitaxial relationship was determined to be [1100] IMPACT STATEMENTThis study demonstrates one of the first epitaxial growths of multiple polymorphs of Ga 2 O 3 on sapphire (0001) substrates, including its β-, α-, and ε-phases. Epitaxial relationship is confirmed through HRTEM. ARTICLE HISTORY

Precise control of the hetero-epitaxy on a low-cost foreign substrate is often the key to drive the success of fabricating semiconductor devices in scale when a large low-cost native substrate is not available. Here, we successfully synthesized three different phases of Ga2O3 (α, β, and ε) films on c-plane sapphire by only tuning the flow rate of HCl along with other precursors in an MOCVD reactor. A threefold increase in the growth rate of pure β-Ga2O3 was achieved by introducing only 5 sccm of HCl flow. With continuously increased HCl flow, a mixture of βand ε-Ga2O3 was observed, until the Ga2O3 film transformed completely to a pure ε-Ga2O3 with a smooth surface and the highest growth rate (~1 µm/hour) at a flow rate of 30 sccm. At 60 sccm, we found that the film tended to have a mixture of αand ε-Ga2O3 with a dominant α-Ga2O3, while the growth rate dropped significantly (~0.4 µm/hour). The film became rough as a result of the mixture phases since the growth rate of ε-Ga2O3 is much higher than α-Ga2O3. In this HClenhanced MOCVD mode, the Cl impurity concentration was almost identical among the investigated samples. Based on our density functional theory calculation, we found that the relative energy between β-, ε-, and α-Ga2O3 became smaller thus inducing the phase change by increasing the HCl flow in the reactor. Thus, it is plausible that the HCl acted as a catalyst during 2 the phase transformation process. Furthermore, we revealed the microstructure and the epitaxial relationship between Ga2O3 with different phases and the c-plane sapphire substrates. Our HClenhanced MOCVD approach paves the way to achieving highly controllable hetero-epitaxy of Ga2O3 films with different phases for device applications.

In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in solar-blind imaging, deep space exploration, confidential space communication, etc. In this work, we demonstrated an ultra-high-performance ε-Ga2O3 metal–semiconductor–metal (MSM) SBPD. The fabricated photodetectors exhibited a record-high responsivity and fast decay time of 230 A/W and 24 ms, respectively, compared with MSM-structured Ga2O3 photodetectors reported to date. Additionally, the ε-Ga2O3 MSM SBPD presents an ultrahigh detectivity of 1.2 × 1015 Jones with a low dark current of 23.5 pA under an operation voltage of 6 V, suggesting its strong capability of detecting an ultraweak signal. The high sensitivity and wavelength selectivity of the photodetector were further confirmed by the record-high responsivity rejection ratio (R 250 nm/R 400 nm) of 1.2 × 105. From the temperature-dependent electrical characteristics in the dark, the thermionic field emission and Poole–Frenkel emission were found to be responsible for the current transport in the low and high electric field regimes, respectively. In addition, the gain mechanism was revealed by the Schottky barrier lowering effect due to the defect states at the interface of the metal contact and Ga2O3 or in the bulk of Ga2O3 based on current transport mechanism and density functional theory calculations. These results facilitate a better understanding of ε-Ga2O3 photoelectronic devices and provide possible guidance for promoting their performance in future solar-blind detection applications.

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

Epitaxial, graphitic carbon thin films were directly grown on C-face/ (0001) SiC and (0001) sapphire by chemical vapor deposition (CVD), using propane as a carbon source and without any catalytic metal on the substrate surface. Raman spectroscopy shows the signature of multilayer graphene/graphite growth on both the SiC and sapphire. Raman 2D-peaks have Lorentzian lineshapes with FWHM of ~60 cm -1 and the ratio of the D-peak to G-peak intensity (I D /I G ) linearly decreases (down to 0.06) as growth temperature is increased. The epitaxial relationship between film and substrates were determined by x-ray diffraction. On both substrates, graphitic layers are oriented parallel to the substrate, but exhibit significant rotational disorder about the surface normal, and predominantly rhombohedral stacking. Film thicknesses were determined to be a function of growth time, growth temperature, and propane flow rate.

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Electrical tunability of molecular doping of graphene has been investigated using back-gated field effect transistors. Variation of the gate voltage from positive to negative values resulted in reduced p-type doping by NO2, which decreased below detection limit at −45 V. A reverse trend was observed for NH3, where its n-type doping increased with more negative gate voltage, becoming undetectable at 5 V. Our results indicate that adsorption induced molecular doping of graphene could not be detected when the Fermi level coincides with the adsorption induced defect states, which yields NO2 acceptor energy level of ∼320 meV below the Dirac point.