High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetector With Asymmetric Schottky Electrodes

Qin, Yuan; Sun, Haiding; Long, Shibing; Tompa, Gary S.; Salagaj, T.; Dong, Hang; He, Qiming; Jian, Guangzhong; Liu, Qi; Lv, Hangbing; Liu, Ming

doi:10.1109/led.2019.2932382

Cited by 96 publications

(58 citation statements)

References 31 publications

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“…For the hexagonal ε-phase, Pavesi et al [103] have fabricated simple cost-effective photoresistors using the single phase ε-Ga 2 O 3 thin films on c-plane sapphire via MOCVD, exhibiting a three order of magnitudes difference upon below/above bandgap illumination and relatively fast on/off switching times. A similar device has been reported by Qin et al [104] although with the use of asymmetric Schottky electrodes, showing an ultrahigh responsivity of 84 A W −1 and a low dark current of 25 pA at 6 V bias.…”

Section: The Functional Material-gallium Oxide: Properties For Photodetection Applicationssupporting

confidence: 74%

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A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

279

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Section: The Functional Material-gallium Oxide: Properties For Photodetection Applicationssupporting

confidence: 74%

“…A similar device has been reported by Qin et al. [ 104 ] although with the use of asymmetric Schottky electrodes, showing an ultrahigh responsivity of 84 A W −1 and a low dark current of 25 pA at 6 V bias.…”

Section: The Functional Material—gallium Oxide: Properties For Photodetection Applicationssupporting

confidence: 73%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

279

153

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“…Owing to the low dark current and fast response speed [ 6 ], the Ga 2 O 3 -based Schottky diode photodetectors also have drawn much attention for high performances. For instance, the high photo responsivity (R), high external quantum efficiency (EQE), large specific detectivity (D*), and short response time in Ni/β-Ga 2 O 3 [ 7 ], Pt/ε-Ga 2 O 3 [ 8 ], graphene/β-Ga 2 O 3 [ 9 ], and MXenes/β-Ga 2 O 3 [ 10 ] photodiodes are realized.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Zhang

Liu

et al. 2021

Micromachines

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In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (Ron), Schottky barrier height (), the ideal factor (n), series resistance (Rs) and the carrier concentration (Nd) by analyzing the current density–voltage (J–V) and capacitance–voltage (C–V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

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“…[ 10–17 ] Also, a variety of thin‐film growth methods have emerged in the past dacades. [ 18–27 ] Wu et al have recently fabricated self‐powered UVC PDs on the grown β‐Ga 2 O 3 film by laser molecular beam epitaxy (MBE) on ZnO substrate, which appears low dark current and a responsivity of 0.763 mAW −1 without bias. [ 28 ] Chen et al have reported the β‐Ga 2 O 3 films on diamond substrates by plasma‐enhanced chemical vapor deposition (PECVD) with the device's faster response speed and the responsivity of 2.6 mAW −1 at zero bias.…”

Section: Introductionmentioning

confidence: 99%

Electrode‐Dependent Electrical Properties of Detection‐Band Tunable Ultraviolet Photodetectors Based on Ga₂O₃/GaN Heterostructures

Tang

Gao

et al. 2021

Physica Status Solidi (a)

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The polycrystal Ga2O3 on GaN was realized by high‐temperature oxidization of the GaN films with oxidation time 1 and 10 h, and the metal‐semiconductor‐metal photodetectors based on the Ga2O3/GaN heterostructure were fabricated by using Ti and Au metal electrodes. A comparative study of different electrodes and oxidation time on the performance of ultraviolet photodetector is performed. Among the devices prepared by 1 h oxidation, it is found that the device fabricated with Au electrode shows a lower dark‐current and higher photocurrent than the one with Ti electrode. This is mainly due to the higher Schottky barrier height of sample with Au electrode. As for the device that experienced 10 h oxidation with Au electrode, the solar‐blind responsivity with the full width at half maxima of 12 nm was obtained, which can be attributed to thicker Ga2O3 film. The devices exhibit excellent performance, including low dark‐current and satisfactory responsivity, even under ultra‐weak signal. The authors attribute these excellent properties to the Ga2O3 film, as it has a large grain size and a porous structure. The results provide a simple method that is low‐cost and high‐output with large‐area production of high‐performance ultraviolet photodetectors.

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High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga₂O₃ Solar-Blind Photodetector With Asymmetric Schottky Electrodes

Cited by 96 publications

References 31 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Electrode‐Dependent Electrical Properties of Detection‐Band Tunable Ultraviolet Photodetectors Based on Ga₂O₃/GaN Heterostructures

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High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes

Cited by 96 publications

References 31 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Electrode‐Dependent Electrical Properties of Detection‐Band Tunable Ultraviolet Photodetectors Based on Ga2O3/GaN Heterostructures

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High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga₂O₃ Solar-Blind Photodetector With Asymmetric Schottky Electrodes

Electrode‐Dependent Electrical Properties of Detection‐Band Tunable Ultraviolet Photodetectors Based on Ga₂O₃/GaN Heterostructures