Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Abstract

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (Ron), Schottky barrier height (), the ideal factor (n), series resistance (Rs) and the carrier concentration (Nd) by analyzing the current density–voltage (J–V) and capacitance–voltage (C–V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

Room‐Temperature Processed Lateral Trench‐Metal–Insulator–Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a‐Ga2O3) Thin Films on Single‐Crystal Silicon <100>

“…[40] Moreover, the use of heavily doped silicon substrate in our design substantially reduces the process complexity exits in making ohmic contact with widebandgap oxide substrate reported by other groups. [35,43,44,48] Also, the extracted ideality factor of n ¼ 1.65 suggests a reasonable uniformity of the Schottky barrier and acceptable deviation from the ideal diodes compared with other literature data. [43,[46][47][48][49] Figure 6 shows the reverse J-V characteristics measured on the same lateral SBDs as those that were used for the forward characterization.…”

“…where J D is the anode-cathode current, V is the anode-cathode DC voltage, A* is the Richardson constant of a-Ga 2 O 3 , 41.07 A (cm 2 •K 2 ) À1 , [44] T is the temperature in Kelvin, q is the electron charge, ϕ b denotes the Schottky barrier height, n is the ideality factor, k B stands for the Boltzmann constant, and R s represents the series resistance of the diode. [19,45] The J-V plot of the diodes in Figure 4a has been curve-fitted with Equation (1)…”

“…[ 40 ] Moreover, the use of heavily doped silicon substrate in our design substantially reduces the process complexity exits in making ohmic contact with wide‐bandgap oxide substrate reported by other groups. [ 35,43,44,48 ]…”

“…The ON/OFF ratio is a significant metric and is often used as a key parameter for SBDs switching performance. For a small voltage range, the performance characteristics of the device are mainly dominated by thermionic emission of the Schottky barrier given by the following equation [ 11–13 ] where J D is the anode–cathode current, V is the anode–cathode DC voltage, A * is the Richardson constant of a‐Ga 2 O 3 , 41.07 A (cm 2 ·K 2 ) −1 , [ 44 ] T is the temperature in Kelvin, q is the electron charge, ϕ b denotes the Schottky barrier height, n is the ideality factor, k B stands for the Boltzmann constant, and R s represents the series resistance of the diode. [ 19,45 ] The J–V plot of the diodes in Figure 4a has been curve‐fitted with Equation () to extract the ideality factor ( n ), on‐state resistance ( R s ), and Schottky barrier potential (ϕ b ).…”

Theoretical insights into the two-dimensional gallium oxide monolayer for adsorption and gas sensing of C4F7N decomposition products

“…As one of the representative materials in wide bandgap semiconductors, Ga 2 O 3 has broad application prospects in power devices and gas sensors by virtue of its ultra-wide intrinsic bandgap, low production cost, and stable physical and chemical properties. [19][20][21] Fleischer et al 22 fabricated a Ga 2 O 3 -based gas sensor to monitor the composition of hot exhaust gases (CH 4 , CO, and others) generated by internal combustion engines. Furthermore, 2D-Ga 2 O 3 has been manufactured by various experimental means, and the performance of 2D-Ga 2 O 3 is superior to that of bulk Ga 2 O 3 in power devices.…”