Metal–Semiconductor–Metal ε-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Qin, Yuan; Li, Liheng; Zhao, Xiaolong; Tompa, Gary S.; Dong, Hang; Jian, Guangzhong; He, Qiming; Tan, Pengju; Hou, Xiaohu; Zhang, Zhongfang; Yu, Shunjie; Sun, Haiding; Xu, Guangwei; Miao, Xiangshui; Xue, Kaiping; Long, Shibing; Liu, Ming

doi:10.1021/acsphotonics.9b01727

Cited by 177 publications

(112 citation statements)

References 66 publications

(113 reference statements)

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“…PD-SL-NSs possesses a superior specific detectivity of 1.58 Â 10 13 Jones and a higher LDR of 51 dB, indicating that PD-SL-NSs has the strong ability to acquire high signal to noise ratio. [19] Meanwhile, as for self-powered mode, i.e., under zero bias, it exhibits a relatively high detectivity of 1.17 Â 10 12 Jones and a higher LDR of 46 dB. Table 1 compares the performance parameters of the photodetectors.…”

Section: Resultsmentioning

confidence: 99%

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Özel

Yıldız

2021

Physica Rapid Research Ltrs

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The development of high‐performance, self‐powered ultraviolet (UV) photodetectors (PDs) is of utmost interest for military and industrial applications. Herein, a novel design scheme for enhancing the performance of self‐powered PDs based on the p–n heterojunction is proposed. The device architecture is engineered by integrating a nanostructured SnO2 layer into the n‐SnO2/p‐Si heterojunction. The resulting device yields an impressively high photoresponsivity of 22.73 A W−1, a large external quantum efficiency of 9065 %, and an outstanding detectivity of 1.57 × 1013 Jones at −5 V for 311 nm. Notably, the PDs possess self‐powered characteristics with an extremely high photoresponsivity of 208 mA W−1 and detectivity of 1.17 × 1012 Jones toward 311 nm without any power supply, suggesting their high potential for future energy‐efficient, self‐powered, high‐performance UV‐detecting application.

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Section: Resultsmentioning

confidence: 99%

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Özel

Yıldız

2021

Physica Rapid Research Ltrs

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“…Therefore, this strongly illustrates that defects or interface states within the film and the M-S barrier play a crucial role in determining the current transport mechanism. [25][26][27][28] Current and voltage show strong dependence on the further increase in the voltage (>65 V). It shows that a new gain mechanism has played a role under high bias.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, this strongly illustrates that defects or interface states within the film and the M–S barrier play a crucial role in determining the current transport mechanism. [ 25–28 ]…”

Section: Resultsmentioning

confidence: 99%

Avalanche Effect and High External Quantum Efficiency in MgZnO/Au/ZnO Sandwich Structure Photodetector

Zhao

Jiang

Zhao

et al. 2021

Advanced Optical Materials

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MSM structure is widely applied to PD owing to its relatively simple preparation methods, short response time, and more effective light collecting area. However, MSM PD poses significant challenges that are mainly related to the external quantum efficiency (EQE) and weak light detection, owing to the optical loss of incident light by electrode shielding and the necessity of applying a bias voltage for device operation. To increase the EQE of PDs and probe weak signals, extensive research efforts have been devoted to the study on EQE of MSM PD in recent years. The research on avalanche effect has received extensive attention owing to its excellent low-light detection capability. [11][12][13][14] Under normal conditions, the avalanche effect is usually realized by p-n or p-i-n photodiodes because of the realization of collision ionization requiring absorption area, transition area, and multiplication area. Therefore, achievement of the avalanche effect in the MgZnO-based MSM PDs still faces many difficulties and challenges. The only MgZnO-based avalanche photodetector (APD) with MSM structure was achieved using MgO as the multiplication area. [8] Herein, MgZnO/Au/ZnO sandwich structure PD (SSPD) based on MSM structure was proposed. Using the particularity of the sandwich structure, the avalanche effect was successfully achieved, while simultaneously improving the EQE of the PD. High EQE of the SSPD comes from the interface defect between ZnO and MgZnO. The existence of defects destroys the periodic potential field generated by the atoms strictly arranged periodically; thus, the energy level that allows electrons to be introduced into the forbidden band of semiconductor is formed. These defect energy levels freely exchange electrons with the conduction band to act as traps. [15] These traps then produce the photoconductive (PC) gain, which is attributed to the capture of holes by the traps at the interface in SSPD. [16] The avalanche effect of SSPD originates from the collision ionization process that occurs inside the MgZnO film. SSPD forms a channel owing to the contact between ZnO and MgZnO. The channel in the MgZnO layer is far away from the defect concentration, which provides a powerful condition for collision ionization. Sandwich structure easily achieves the avalanche effect compared to MSM structure.In this study, MgZnO/Au/ZnO SSPD with a low dark current was successfully fabricated. Under the 275 nm

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“…found that using ε‐Ga 2 O 3 , the gain of MSM‐PDs could reach 1150; meanwhile, the response speed was not too slow (24 ms). [ 136 ]…”

Section: Research Status Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.

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Metal–Semiconductor–Metal ε-Ga₂O₃ Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Cited by 177 publications

References 66 publications

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Avalanche Effect and High External Quantum Efficiency in MgZnO/Au/ZnO Sandwich Structure Photodetector

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

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Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Cited by 177 publications

References 66 publications

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W−1) based on SnO2 Nanostructures/Si Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W−1) based on SnO2 Nanostructures/Si Heterojunctions

Avalanche Effect and High External Quantum Efficiency in MgZnO/Au/ZnO Sandwich Structure Photodetector

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

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Product

Resources

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Metal–Semiconductor–Metal ε-Ga₂O₃ Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions