We describe the calibration of a technique allowing quantitative
measurements of industrial coatings with thicknesses as small as 10-20 nm.
Wax films doped with fluorescent rhodamine dye have been deposited by an
electrospray method onto an optically flat surface of aluminium-coated glass.
The films were of 220-450 nm peak thickness, which we measured with an
optical profilometer using laser triangulation. Possession of a set of films
allowing an absolute calibration of the fluorescence intensity versus
thickness to be achieved for application in trials of the fluorescence method
for measuring coating thicknesses of 10-20 nm under industrial process
conditions.
The formation of Schottky barriers at the Sb/n-ZnSe interface has been investigated for a selected number of chemically etched n-ZnSe surfaces. Microscopic properties of the surfaces and interfaces have been observed with SEM, XPS, AES and SIMS, while the conventional I-Y technique has been used to determine the macroscopic electrical properties. Both polycrystalline ZnSe wafers and molecular beam epitaxy-grown layers of n-ZnSe on n+-GaAs substrates were used for this investigation. Stoichiometric variations resulting from wet chemical etching of n-ZnSe were investigated using XPS, AES and SIMS techniques. The electrical properties of Sb contacts formed by vacuum evaporation on the etched surfaces were also determined. Possible intermixing at the Sbln-ZnSe interface was studied using the SIMS imaging technique. The correlation between macroscopic electrical properties and microscopic interactions at the interface will be presented in this paper.
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S b layers on chemically etched n-CdTe provide noise-free electrical contacts suitable for various electronic devices. These interfaces produce Schottky barriers of -0.94 eV with excellent rectification properties. In this work we have studied the stability of these contacts in detail under normal laboratory conditions. The results reveal that a gradual reduction of their rectification property is due to an increase in series resistance ana a iarge contribution irom recombination and generation current. We have also carried out Auger depth profiling through these interfaces to study their compositional structure after aging. In-diffusion of Sb and out-diffusion of both Cd and Te is observed for these interfaces. We consider t h e implications of these microscopic interactions on the macroscopic electrical properties of the Sb/n-CdTe interfaces.
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