Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe

II–VI Semiconductor-Based Conductometric Gas Sensors: Is There a Future for These Sensors?

“…This means that when preparing a CdTe surface, the use of treatments (see Table 5 ) that promote the formation of a Te-rich surface should be avoided. Dharmadasa et al [ 166 , 168 , 169 ] also found a strong influence of CdTe surface stoichiometry on the height of the potential barrier at Schottky contacts. They found that Te-rich surfaces tend to have lower Schottky barriers (~0.74 eV), whereas Cd-rich surfaces tend to have higher Schottky barriers (~0.93 eV).…”

“…Jaseniak and Mulvaney [ 165 ] demonstrated that CdSe nanocrystals with Cd- or Se-rich surfaces have significant differences in chemical nature, adsorption properties, and stability. The results of the effect of chemical treatment on the surface stoichiometry of ZnSe are given in Table 4 [ 166 ].…”

“…Jaseniak and Mulvaney [165] demonstrated that CdSe nanocrystals with Cd-or Se-rich surfaces have significant differences in chemical nature, adsorption properties, and stability. The results of the effect of chemical treatment on the surface stoichiometry of ZnSe are given in Table 4 [166]. How critical the choice of chemical processing is in the sensor manufacturing process can also be determined based on the results reported by Reese et al [167].…”

Electrical properties at p-ZnSe/metal interfaces

“…17 Therefore, materials which easily react with Se such as Ni or Ag tend to react with the ZnSe substrate at low temperatures. 17 Therefore, materials which easily react with Se such as Ni or Ag tend to react with the ZnSe substrate at low temperatures.…”