Electrical properties at p-ZnSe/metal interfaces

Kawakami, Tsuyoshi; Koide, Yasuo; Teraguchi, N.; Tomomura, Y.; Suzuki, Akira; Murakami, Masanori

doi:10.1007/s11664-998-0123-2

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1998

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“…In addition, reactions between p-ZnSe and metals upon annealing at elevated temperatures reduced the net acceptor concentrations, N A -N D , in the p-ZnSe epilayer close to the contact interface, which was a big disadvantage to prepare low resistance ohmic contact materials to pZnSe. 4 The most possible way to prepare ohmic contacts to p-ZnSe is to reduce significantly the SBH by fabricating an intermediate semiconductor layer between the p-ZnSe and the metal. This technique was first invented by Woodall et al 5 to prepare in-situ ohmic contacts to n-GaAs.…”

Section: Introductionmentioning

confidence: 99%