Aging effects and Auger depth profiling studies of Sb/n-CdTe contacts

Abstract

S b layers on chemically etched n-CdTe provide noise-free electrical contacts suitable for various electronic devices. These interfaces produce Schottky barriers of -0.94 eV with excellent rectification properties. In this work we have studied the stability of these contacts in detail under normal laboratory conditions. The results reveal that a gradual reduction of their rectification property is due to an increase in series resistance ana a iarge contribution irom recombination and generation current. We have also carried out Auger depth profiling through these interfaces to study their compositional structure after aging. In-diffusion of Sb and out-diffusion of both Cd and Te is observed for these interfaces. We consider t h e implications of these microscopic interactions on the macroscopic electrical properties of the Sb/n-CdTe interfaces.

Charge Transport Mechanisms in Au–CdTe Space-Charge-Limited Schottky Diodes

“…A larger barrier height (0.92 eV) has been reported for Au/Cd alloy in contact with clean surfaces of single crystal CdTe [24]. Some recent reports on single crystal CdTe reveal even higher values, 0.94 eV (with Sb) [25] and 0.99 eV (with Au) [26]. The variation in the reported value for the Schottky barrier height is likely due to the effect of surface states.…”

Schottky barrier and ageing effect studies in Au(Cu)/p‐CdTe contacts

“…In this study we report the results of an investigation of ageing effects in Au and Cu contacts made on chemically etched surfaces of p-CdTe single crystals. Ageing effects in metal contacts to n-CdTe were investigated in [1,2]. Similar investigations in contacts to p-CdTe has not been performed yet.The formation of the Schottky barriers in p-CdTe is not known exactly.…”