Schottky barrier and ageing effect studies in Au(Cu)/p‐CdTe contacts

Abstract

The Schottky barrier formation are investigated in Au(Cu)/p-CdTe contacts prepared by electroless deposition of metals on chemically etched surfaces. The Schottky barrier height are studied in freshly prepared contacts as well as stored under normal laboratory condition during one-year period. The potential barrier height is determined from the photoemission current spectra measurements. The secondary ion-mass spectroscopy (SIMS) profiling has been carried out to study the compositional structure in the contacts. The effect of thermal annealing on electrical and photoelectrical properties of the contacts was studied.

The Interface Reaction and Schottky Barrier Between Metals and CdZnTe

“…Electroless deposition of gold from a gold chloride solution was widely used, mainly as an ohmic contact on p-type CdTe and CdZnTe. Though the composition and ohmic behavior of the contact was studied in detail, ,, the mechanism of the ohmic contact is puzzling.…”

“…The model can be used to explain the annealing experiment. The ohmic property of electroless Au contact will be improved by annealing in the oxygen or atmosphere, while annealing in the hydrogen or vacuum, the property will be degenerated , due to the deoxidation of the CdTeO 3 interface layer.…”

The study on the work function of CdZnTe with different surface states by synchrotron radiation photoemission spectroscopy

“…5 As well known, besides the quality of the semiconductor crystal, the property of surface and interface is a crucial factor governing the performance of semiconductor device. 6 Although the influences of surface and interface on the performance of CdZnTe detector have been extensively studied, [7][8][9][10][11] the essence of CdZnTe surface and interface has not been well understood.…”