The study on the work function of CdZnTe with different surface states by synchrotron radiation photoemission spectroscopy

Zha, Gangqiang; Wang, Jie; Bai, Xiaohui; Wang, Tao; Fu, Li; Zhang, Wenhua; Zhu, Junfa; Xu, F.

doi:10.1063/1.3211325

Cited by 11 publications

(8 citation statements)

References 22 publications

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“…Cd 0.96 Zn 0.04 Te wafers were cut along the (111) orientation from a vertical Bridgman grown ingot [12][13][14]. All the specimens were 10 mm in length, 10 mm in width, and 1 mm in thickness.…”

Section: Methodsmentioning

confidence: 99%

“…During CZT device fabrication, nanogrinding is required to remove the deformed layers of CZT wafers sliced from an ingot [3,11]. Deformed layers induced by machining significantly affect the mechanical, optical, and electrical properties of both soft-brittle CZT [12][13][14] and hard-brittle silicon (Si) [15][16][17][18][19][20][21][22] semiconductor materials, such as silicon (Si), germanium, and gallium arsenide, generated by mechanical machining [3] and so are likely to have distinct mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

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Mechanical properties of nanocrystalline deformed layers induced by nanogrinding of CdZnTe single crystals

Zhou

Wang

Song

et al. 2012

Philosophical Magazine Letters

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Nanocrystalline deformed layers were generated in cadmium zinc telluride (CZT) single crystals by nanogrinding using three different grit sizes. The mechanical properties of the deformed layers were measured using nanoindentation. The hardness of the deformed nanocrystalline layers in the soft-brittle CZT semiconductor was higher than that of the perfect single crystal. This result is different from those found for deformed layers of hard-brittle silicon semiconductors, where the hardness of the deformed layers is lower than those of the perfect single crystal.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanical properties of nanocrystalline deformed layers induced by nanogrinding of CdZnTe single crystals

Zhou

Wang

Song

et al. 2012

Philosophical Magazine Letters

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“…Low SBH or even Ohmic contact is of vital importance for semiconductor detectors . However, due to the large work function of p type CZT, it is difficult to find a proper metal to form a low SBH electrode . The common electrode for CZT detector is Au, , but the poor adhesion of Au on CZT surface limits the detector properties. , Therefore, it is very meaningful to find a proper electrode material, which will not only form a low SBH contact, but also enhance the interface adhesion with CZT crystal.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Low Schottky Barrier Formation for Chromium/CdZnTe Contact

Wang

Zha

et al. 2014

J. Phys. Chem. C

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Low Schottky barrier electrode has great significance on CdZnTe semiconductor nuclear radiation detectors. In this work, synchrotron radiation photoemission spectroscopy (SRPES) has been used to study the interface electronic structure of chromium (Cr) and CdZnTe with Cr coverage thicknesses ranging from 6 to 45.7 Å. Interface reaction and diffusion happen during the Cr deposition. A new interface structure CdZnTe−Cr−Te hence forms, which causes a positive dipole layer at the interface. Schottky barrier height (SBH) is reduced by 0.34 eV due to the dipole layer. Cr/CdZnTe interface structure can effectively change the SBH. Therefore, Cr can be a favorable low Schottky barrier electrode material for CdZnTe detector.

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“…1,2 The technique is based on measuring the onset position (i.e., low energy cutoff) of the secondary electron energy distribution, which is related to the sample work function. Since the secondary electrons are usually produced by photon irradiation, [3][4][5][6][7][8][9][10][11][12][13][14][15][16] the method is also known as photoemission measurement of the work function. However, WFS can also be performed by the use of any other beam that will provide secondary electron emission.…”

Section: Introductionmentioning

confidence: 99%

Influence of the patch field on work function measurements based on the secondary electron emission

Bundaleski

Trigueiro

Silva

et al. 2013

Journal of Applied Physics

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A work function study based on the onset shift (i.e., following low energy cutoff) of secondary electron spectra has been used for the last four decades to monitor the deposition and adsorption in real time, measure the dipole momentum and polarizability of the surface layer, and determine the lateral distribution of the work function. In this work, we show that the onset shift depends on both the coverage of adsorbed species that change the work function and the size of low work function patches. Additionally, the extraction field, which is always applied in these measurements, may also influence the onset shift. Numerical calculations of the potential distributions above different non-uniform surfaces were performed in order to quantitatively determine each of these influences. Depending on the patch size, we define three measurement regimes in which the onset position is related to either the surface average of the work function (small patches), the minimum local work function (large patches), or a value in-between (intermediate size patches). Experimental data have corroborated these findings and demonstrated that manipulating the extraction field intensity enables transition between the measurement regimes. Typical misinterpretations due to neglecting the patch size contribution and the surface non-uniformity to the onset shift are analyzed. Additionally, possible application of work function study for determination of the growth mode in the case of submonolayer deposition was discussed. V

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The study on the work function of CdZnTe with different surface states by synchrotron radiation photoemission spectroscopy

Cited by 11 publications

References 22 publications

Mechanical properties of nanocrystalline deformed layers induced by nanogrinding of CdZnTe single crystals

Mechanical properties of nanocrystalline deformed layers induced by nanogrinding of CdZnTe single crystals

Mechanism of Low Schottky Barrier Formation for Chromium/CdZnTe Contact

Influence of the patch field on work function measurements based on the secondary electron emission

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