We investigate the exchange coupling between perpendicular anisotropy (PMA) Co/Pt and IrMn in-plane antiferromagnets (AFMs), as well as tunneling anisotropic magnetoresistance (TAMR) in [Pt/Co]/IrMn/AlO_{x}/Pt tunnel junctions, where Co/Pt magnetization drives rotation of AFM moments with the formation of exchange-spring twisting. When coupled with a PMA ferromagnet, the AFM moments partially rotate with out-of-plane magnetic fields, in contrast with being pinned along the easy direction of IrMn for in-plane fields. Because of the superior thermal tolerance of perpendicular exchange coupling and the stability of moments in ~6 nm-thick IrMn, TAMR gets significantly enhanced up to room temperature. Their use would advance the process towards practical AFM spintronics.

The control of complex oxide heterostructures at atomic level generates a rich spectrum of exotic properties and unexpected states at the interface between two separately prepared materials. The frustration of magnetization and conductivity of manganite perovskite at surface/interface which is inimical to their device applications, could also flourish in tailored functionalities in return. Here we prove that the exchange bias (EB) effect can unexpectedly emerge in a (La,Sr)MnO3 (LSMO) “single” film when large compressive stress imposed through a lattice mismatched substrate. The intrinsic EB behavior is directly demonstrated to be originating from the exchange coupling between ferromagnetic LSMO and an unprecedented LaSrMnO4-based spin glass, formed under a large interfacial strain and subsequent self-assembly. The present results not only provide a strategy for producing a new class of delicately functional interface by strain engineering, but also shed promising light on fabricating the EB part of spintronic devices in a single step.

The interplay between orbital, charge, spin, and lattice degrees of freedom is at the core of correlated oxides. This is extensively studied at the interface of heterostructures constituted of two-layer or multilayer oxide films. Here, we demonstrate the interactions between orbital reconstruction and charge transfer in the surface regime of ultrathin (La,Sr)MnO3, which is a model system of correlated oxides. The interactions are manipulated in a quantitative manner by surface symmetry-breaking and epitaxial strain, both tensile and compressive. The established charge transfer, accompanied by the formation of oxygen vacancies, provides a conceptually novel vision for the long-term problem of manganites—the severe surface/interface magnetization and conductivity deterioration. The oxygen vacancies are then purposefully tuned by cooling oxygen pressure, markedly improving the performances of differently strained films. Our findings offer a broad opportunity to tailor and benefit from the entanglements between orbit, charge, spin, and lattice at the surface of oxide films.

We investigate the electrical manipulation of Co/Ni magnetization through a combination of ionic liquid and oxide gating, where HfO2 with a low O2− ion mobility is employed. A limited oxidation-reduction process at the metal/HfO2 interface can be induced by large electric field, which can greatly affect the saturated magnetization and Curie temperature of Co/Ni bilayer. Besides the oxidation/reduction process, first-principles calculations show that the variation of d electrons is also responsible for the magnetization variation. Our work discloses the role of gate oxides with a relatively low O2− ion mobility in electrical control of magnetism, and might pave the way for the magneto-ionic memory with low power consumption and high endurance performance.

Articles you may be interested inMultilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device J. Appl. Phys. 116, 154509 (2014); 10.1063/1.4898807 Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization J. Appl. Phys. 116, 043708 (2014); 10.1063/1.4891242Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy Appl. Phys. Lett.The Ag/SiO 2 /indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of $10 2 , satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO 2 / ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density. V C 2014 AIP Publishing LLC.