2014
DOI: 10.1038/srep04206
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Tuning the entanglement between orbital reconstruction and charge transfer at a film surface

Abstract: The interplay between orbital, charge, spin, and lattice degrees of freedom is at the core of correlated oxides. This is extensively studied at the interface of heterostructures constituted of two-layer or multilayer oxide films. Here, we demonstrate the interactions between orbital reconstruction and charge transfer in the surface regime of ultrathin (La,Sr)MnO3, which is a model system of correlated oxides. The interactions are manipulated in a quantitative manner by surface symmetry-breaking and epitaxial s… Show more

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Cited by 48 publications
(51 citation statements)
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“…Application of the field-effect transistor principle to achieve doping variation has modulated the magnetic or electric performances and phase transition in manganites, [16,17] which is expected to provide an approach to tuning orbital occupancy reversibly. The main technological challenge for measuring the change of the orbital order under the influence of an electric field is that the detection of orbital occupancy using x-ray linear dichroism (XLD), calls for an exposed sample with a robust remanent electric field effect, [18] which cannot be achieved by conventionally electrostatic modification of carrier density. [10,11] Fortunately, the relaxation of the gating effect generated by ionic liquid in manganites is negligible even after gate voltage is turned off, guaranteeing ex situ measurements of the orbital.…”
Section: Introductionmentioning
confidence: 99%
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“…Application of the field-effect transistor principle to achieve doping variation has modulated the magnetic or electric performances and phase transition in manganites, [16,17] which is expected to provide an approach to tuning orbital occupancy reversibly. The main technological challenge for measuring the change of the orbital order under the influence of an electric field is that the detection of orbital occupancy using x-ray linear dichroism (XLD), calls for an exposed sample with a robust remanent electric field effect, [18] which cannot be achieved by conventionally electrostatic modification of carrier density. [10,11] Fortunately, the relaxation of the gating effect generated by ionic liquid in manganites is negligible even after gate voltage is turned off, guaranteeing ex situ measurements of the orbital.…”
Section: Introductionmentioning
confidence: 99%
“…[10,11] Fortunately, the relaxation of the gating effect generated by ionic liquid in manganites is negligible even after gate voltage is turned off, guaranteeing ex situ measurements of the orbital. [19] , where x could be controlled by the Sr concentration, [4] oxygen pressure during film growth, [18] and gate voltage. [20] We investigate samples of (La,Sr)MnO 3 (Figure 2b).…”
Section: Introductionmentioning
confidence: 99%
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“…The XA spectra of the uncapped LSMO film are consistent with the mixed Mn 3þ and Mn 4þ valence expected in LSMO films, with a weak shoulder peak which may indicate a small amount of strain induced oxygen vacancy formation near the LSMO surface. [28][29][30][31][32] Such peaks are commonly observed in LSMO films, and this peak is greatly enhanced in the Gd capped sample, which shows a sharp deviation in the XA lineshape. Based on the position and increased intensity of this L 3 shoulder peak, we conclude that additional oxygen vacancies are formed and a significant fraction of the interfacial Mn is in the 2þ valence state.…”
mentioning
confidence: 99%
“…Based on the position and increased intensity of this L 3 shoulder peak, we conclude that additional oxygen vacancies are formed and a significant fraction of the interfacial Mn is in the 2þ valence state. [31][32][33][34][35] The main L 3 peak (E % 641 eV) is also shifted to slightly lower energy, indicating movement from mixed Mn 3þ and Mn 4þ to pure Mn 3þ . [33][34][35] The decreased relative intensity of the L 2 edge for Gd-capped samples is consistent with this interpretation.…”
mentioning
confidence: 99%