Anti‐Ferromagnet Controlled Tunneling Magnetoresistance

Wang, Yuyan; Song, Cheng; Wang, Guangyue; Miao, Jiao; Zeng, Fei; Pan, Feng

doi:10.1002/adfm.201401659

Cited by 39 publications

(32 citation statements)

References 33 publications

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“…As d IrMn is further increased, the volume of AFM grains and the anisotropy energy barrier will increase, resulting in a reduction in probability of thermally activated transitions. So the pinning direction is stable when the d IrMn is respectively thin and the pinning field can ensure the magnetic moments rotate consistently, which is in good agreement with that of Wang et al [16,17]. Meanwhile, the ultrathin Cu space layer was inserted into the NiFe (10 nm)/IrMn(4 nm) interface which is shown in Fig.…”

Section: Resultssupporting

confidence: 83%

The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments

Zhao

Kang

et al. 2015

Applied Surface Science

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Section: Resultssupporting

confidence: 83%

The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments

Zhao

Kang

et al. 2015

Applied Surface Science

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“…We note that there has been several proposals for an AFM junctions (tunneling or metallic) based on collinear AFMs [51][52][53][54], but so far only a tiny TMR effect has been demonstrated [55]. The non-collinear AFMTJs are promising candidates for an experimental realization of an AFMTJ since they are based on the same mechanism as the, experimentally well established, FM MTJs.…”

mentioning

confidence: 84%

Spin-Polarized Current in Noncollinear Antiferromagnets

et al. 2017

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Noncollinear antiferromagnets, such as Mn3Sn and Mn3Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin-polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to a transversal spin current, which has a distinct symmetry and origin from the conventional spin Hall effect. We illustrate the existence of the spin-polarized current and the transversal spin current by performing ab initio microscopic calculations and by analyzing the symmetry. Based on the spinpolarized current we propose an antiferromagnetic tunneling junction, analogous in functionality to the magnetic tunneling junction.Introduction. Spintronics is a field that studies phenomena in which both spin and charge degree of electron play an important role. Many of the key spintronics effects are based upon the existence of spin currents. Two main types of spin currents are utilized: the spin-polarized currents in ferromagnets (FMs) and the spin currents due to the spin Hall effect (SHE) which are transveral to the charge current and appear even in non-magnetic materials. The most important effects that originate from the spin-polarized currents in FMs are the giant and the tunneling magnetoresistance effects (GMR and TMR) [1][2][3] and the spin-transfer torque (STT) [4,5]. These effects are utilized in magnetic tunneling junctions (MTJs), which form the basic building block of a new type of solid state memory, the magnetic random access memory (MRAM) [6]. This memory is non-volatite and has speed and density comparable to the widely used dynamic random access memory. The SHE on the other hand is responsible (though other effects can contribute) for the spin-orbit torque (SOT) [7,8] in multilayer heterostructures, which can be used for efficient and fast switching of FM layers. The SOT is now also being explored for use in MRAMs [9,10].While spintronics has traditionally focused on FM and non-magnetic materials, in the past few years also antiferromagnetic (AFM) materials have attracted a considerable interest. AFMs offer some unique advantages compared to FMs, but are much less explored (see reviews [11][12][13]). AFMs have a very fast dynamics, which allows for switching on ps timescale [14][15][16]. Furthermore, there exists a wide range of AFM materials, including many insulators and semiconductors, multiferroics [17] and superconductors [18]. Utilizing (and also studying) AFMs is difficult, largely because the magnetic order in AFMs is hard to detect and to manipulate. Recently, electrical detection [19][20][21][22][23] and manipulation of the AFM order has been demonstrated [23,24], however, both detection and manipulation still remain challenging from a practical point of view.

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“…II.A.2), giant magnetoresistance (Y. Y. Wang et al, 2014a) (see Sec. II.C), and enhanced spin pumping near the Néel temperature (Frangou et al, 2016) (see Sec.…”

Section: Metalsmentioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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Anti‐Ferromagnet Controlled Tunneling Magnetoresistance

Cited by 39 publications

References 33 publications

The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments

The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments

Spin-Polarized Current in Noncollinear Antiferromagnets

Antiferromagnetic spintronics

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