The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments

Zhao, Zhenwei; Li, Minghua; Kang, Peng; Zhao, Ce Zhou; Zhang, Jingyan; Zhou, Lijuan; Zhao, Yuqing; Jiang, Shaolong; Yu, Guo

doi:10.1016/j.apsusc.2015.01.111

Cited by 12 publications

(5 citation statements)

References 23 publications

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“…The PHR magnetic sensor was fabricated with the following steps: thermal oxidation on a 4 silicon wafer, sputtering deposition of the magnetic thin film, Al signal line process, and passivation oxide deposition. The magnetic thin film is composed of three metal layers of NiFe-Cu-IrMn, in which the exchange interaction between NiFe and IrMn works through the Cu layer (Elzwawy et al, 2019;Sinha et al, 2013;Zhao et al, 2015;Spizzo et al, 2017).…”

Section: Manufacturing Of the Phr Magnetic-field Sensormentioning

confidence: 99%

Analysis of thermal-offset drift of a high-resolution current probe using a planar Hall resistance sensor

Lee,

Kim,

Lee

2023

J. Sens. Sens. Syst.

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Abstract. We developed a pin-type current probe with high sensitivity, targeting electrical-probing printed circuit boards (PCBs). The developed sensor showed good enough characteristics, with 1 mA resolution on current measurements and up to 1 MHz operating frequency for analyzing highly integrated PCBs. During its characterization, however, we experienced a monotonously varying output signal in the time range of a few tens of minutes. We modeled it as the thermal-offset drift, being caused by Joule heating during sensor operation, and showed several solutions for reducing the offset by modifying the planar Hall resistance (PHR) layout and electric operation conditions and applying sensor circuitry with pulse width modulation.

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Section: Manufacturing Of the Phr Magnetic-field Sensormentioning

confidence: 99%

Analysis of thermal-offset drift of a high-resolution current probe using a planar Hall resistance sensor

Lee,

Kim,

Lee

2023

J. Sens. Sens. Syst.

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“…The exchange bias field (H ex ) can be reduced by inserting a NM thin spacer layer between FM and AF layers [93,97,155,156]. Thus, the H ex can be well-tuned in FM/NM/AF trilayer sensor structures by varying the thickness of the NM spacer layer.…”

Section: Trilayersmentioning

confidence: 99%

Current trends in planar Hall effect sensors: evolution, optimization, and applications

Elzwawy

Pişkin

Akdoğan

et al. 2021

J. Phys. D: Appl. Phys.

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The advantages of planar Hall effect (PHE) sensors-their thermal stability, very low detection limits, and high sensitivities-have supported a wide range of advanced applications such as nano-Tesla (nT) magnetometers, current sensing, or low magnetic moment detection in lab-on-a-chip devices. In this review we outline the background and implications of these PHE sensors, starting from fundamental physics through their technological evolution over the past few decades. Key parameters affecting the performance of these sensors, including noise from different sources, thermal stability, and magnetoresistance magnitudes are discussed. The progression of sensor geometries and junctions from disk, cross-to-bridge, ring, and ellipse configuration is also reviewed. The logical sequence of these structures from single magnetoresistive layers to bi-, tri-layers, and spin-valves is also covered. Research contributions to the development of these sensors are highlighted with a focus on microfluidics and flexible sensorics. This review serves as a comprehensive resource for scientists who wish to use PHE for fundamental research or to develop new applications and devices. The conclusions from this report will benefit the development, production, and performance evaluation of PHE-based devices and microfluidics, as well as set the stage for future advances.

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“…(15) From equation (15), the capping layer thickness can be derived as a function of the spacer layer thickness:…”

Section: Reduction Of Power Consumption By Thickness Variation Of Non...mentioning

confidence: 99%

“…The magnetic field sensitive junction of the PHE sensor usually contains a ferro/antiferromagnetic (FM/ AFM) bilayer [11,12], or ferro/nonmagnetic/antiferromagn etic (FM/NM/AFM) trilayer [13,14]. The interface coupling between FM and AFM results in spinning of the FM layer's magnetization and shifts the center of its hysteresis loop to nonzero field, defined as exchange bias field [15,16]. When a magnetic field is applied along a hard axis, the exchange bias allows rotationalonly magnetization reversal of the FM layer.…”

Section: Introductionmentioning

confidence: 99%

Equisensitive adjustment of planar Hall effect sensor’s operating field range by material and thickness variation of active layers

Elzwawy

SungJoon

Таланцев

et al. 2019

J. Phys. D: Appl. Phys.

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A novel technique of operating field range adjustment using varying thicknesses of spacer and capping layers is proposed for planar Hall effect (PHE) magnetic sensors. In terms of this technique, the spacer and capping layer thicknesses are varied interdependently, in a way that the variation of the operating magnetic field range is performed without a change of sensitivity. The relationship between the thicknesses of spacer and capping layers required for this 'equisensitive' variation of field range are calculated and experimentally approved. The active layer material substitution effect on the performance of PHE sensor is studied. The sensitivity, output voltage, operating field range, and shunt current are compared for PHE sensors, based on NiFe and NiFeMo active ferromagnetic layers. The NiFe/IrMn and NiFeMo/ IrMn interface coupling energies are compared and the effect of IrMn crystallinity on their difference is discussed. The range of active layer thicknesses, at which the operating field range can be varied while maintaining the sensitivity at the same value, has been determined.

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The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments

Cited by 12 publications

References 23 publications

Analysis of thermal-offset drift of a high-resolution current probe using a planar Hall resistance sensor

Analysis of thermal-offset drift of a high-resolution current probe using a planar Hall resistance sensor

Current trends in planar Hall effect sensors: evolution, optimization, and applications

Equisensitive adjustment of planar Hall effect sensor’s operating field range by material and thickness variation of active layers

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