Electrical Manipulation of Orbital Occupancy and Magnetic Anisotropy in Manganites

Cui, Bin; Song, Cheng; Gehring, G. A.; Fan, Li; Wang, Guangyue; Chen, Chao; Peng, Junping; Mao, Haijun; Zeng, Fei; Pan, Feng

doi:10.1002/adfm.201403370

Cited by 108 publications

(131 citation statements)

References 37 publications

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“…Because d Ã 33 consists two parts 24,25 : one is the intrinsic contribution, which is related to structural lattice of the crystal; the other is the extrinsic contribution to the piezoelectric effect, which is associated with the domain contributions. [26][27][28] d Ã 33 firstly increases and then decreases, reaching a maximum with Sn content of 0.006. The enhanced piezoelectric properties of air and reduced fired Sn6 samples can be explained as the domains near the PPT region are more mobile under the applied electric field.…”

Section: Resultsmentioning

confidence: 98%

“…The calculated

d_{33}^{*}

is much higher than the quasistatic d 33 ‐values obtained by the direct measurement (Table ). Because

d_{33}^{*}

consists two parts: one is the intrinsic contribution, which is related to structural lattice of the crystal; the other is the extrinsic contribution to the piezoelectric effect, which is associated with the domain contributions .

d_{33}^{*}

firstly increases and then decreases, reaching a maximum with Sn content of 0.006.…”

Section: Resultsmentioning

confidence: 99%

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Defect engineering of high‐performance potassium sodium niobate piezoelectric ceramics sintered in reducing atmosphere

et al. 2017

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Reducing atmosphere fired (K0.5Na0.5)NbO3‐based ceramics open up an important opportunity for manufacturing lead‐free multilayer piezoelectric devices cofiring with the base metal inner electrode. In this study, the effects of sintering atmosphere on the piezoelectric, dielectric, and insulating properties in Sn‐doped (Na0.52K0.44Li0.04)NbO3 (KNN) were investigated. To establish the relationship between the defect structure and electrical properties, the thermally stimulated depolarization current (TSDC) technique was implemented. The electrical properties degrade severely when the pure KNN ceramics are sintered in reducing atmosphere, compared with the ceramics sintered in air. The reason is that the oxygen vacancy concentration in reduced fired ceramics is much higher than that in air fired ceramics. However, the 0.6 mol% Sn‐doped KNN ceramics sintered in reducing atmosphere exhibit comparable electrical properties to the air fired ceramics. From the TSDC analysis, the reducing atmosphere fired ceramics have approximately the same oxygen vacancy concentration as the air fired ceramics because B‐site substituted Sn works as an acceptor.

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Section: Resultsmentioning

confidence: 98%

“…The calculated

d_{33}^{*}

is much higher than the quasistatic d 33 ‐values obtained by the direct measurement (Table ). Because

d_{33}^{*}

d_{33}^{*}

firstly increases and then decreases, reaching a maximum with Sn content of 0.006.…”

Section: Resultsmentioning

confidence: 99%

Defect engineering of high‐performance potassium sodium niobate piezoelectric ceramics sintered in reducing atmosphere

et al. 2017

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“…The linear fit of the Almeida-Thouless line in the inset of Figure 5(d) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 So far, we have confirmed the existence of SG at the LSMO/LNO, which usually originates from the competition between the AFM and FM interaction in most systems. 18,26 Recalling the orbital reconstruction, the stabilization of 3z 2r 2 orbits for the interfacial LSMO tends to reduce the in-plane double exchange, and instead C-type AFM structure is favored. Thus the long-range FM order is disturbed by the C-type AFM structure, which not only causes the magnetization suppression as mentioned above but also breeds the interfacial SG.…”

Section: Resultsmentioning

confidence: 99%

Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO₃/LaNiO₃ Heterostructures

Peng

Song

et al. 2015

ACS Appl. Mater. Interfaces

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We investigate charge transfer, orbital reconstruction, and the emergence of exchange bias in (La,Sr)MnO3/LaNiO3 heterostructures. We demonstrate that charge transfer from Mn(3+) ions to Ni(3+) ions is accompanied by the formation of hybridized Mn/Ni 3z(2) - r(2) orbits at the interface, instead of strain-stabilized Mn and Ni x(2) - y(2) orbits in the bulk films. In the heterostructures with ultrathin LaNiO3, orbital reconstruction induced by charge transfer results in magnetization frustration of (La,Sr)MnO3 at the interface. But the strain effect exerted by the growth of the LaNiO3 top layer plays a dominant role on orbital reconstruction in the heterostructures with thick LaNiO3, stabilizing 3z(2) - r(2) orbits. In this case, robust spin glass, associated with larger magnetization frustration, accounts for the exchange bias effect. Our work builds a bridge between the microscopic electronic structure and the macroscopic magnetic property, providing the possibility of manipulating the exotic states with the aid of strain engineering in oxide-based electronics.

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“…[ 32,33 ] Hall bar devices with channel width of 3 µm were fabricated by e-beam lithography and argon ion etching. [ 32,[34][35][36] Although the existence of 4 nm thick HfO x would weaken the electric fi eld inevitably, the electric fi eld effect generated here is still much larger than that of simply using traditional ≈100 nm -thick dielectric. An optical image of the representative device is displayed in Figure 1 b and the expanded Hall cross is shown in the inset.…”

Section: Introductionmentioning

confidence: 90%

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Yan

Wan

Zhou

et al. 2016

Adv Elect Materials

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metal (Pt, Ta, etc.) and/or the Rashba effect from the inversion asymmetry of HM/FM and FM/oxide interfaces both contribute to the spin-orbit torque and the effective switching fi eld. [16][17][18][19] Half a decade has already passed since the fi rst report of SOT in perpendicularly magnetized heterostructures. [ 20 ] Efforts are increasingly shifting not only to explore SOT in different systems, but also to its manipulation in practical devices. [21][22][23][24] At the same time, electric fi eld control of magnetization is of great interest in the area of spintronics for its rich physics and potential use in information technology due to its low energy consumption and compatibility with classic electronics. [25][26][27] Following the effective manipulation of magnetic order by electrical means in different systems, Liu et al. [ 28 ] proposed the concept of electrical control of SOT in Pt/Co/Al 2 O 3 heterostructures, but the efficiency is in a quite limited scale. Very recently, Fan et al. [ 29 ] utilized the Cr-doped topological insulator and successfully modulated the SOT by a factor of four using a gate voltage ( V G ) of 10 V at 1.9 K taking the ultralow Curie temperature ( T C ) of the magnetic topological insulator into account. Now the research interest is whether an elegant approach could significantly modulate the SOT in a nonvolatile manner at a practical temperature ( T ). We experimentally demonstrated the strong electrical control of SOT in perpendicularly magnetized Pt/Co/ HfO x heterostructures. Positive and negative V G enhance and reduce the critical current for magnetization switching respectively with the assistance of ionic liquid gating mainly through the modulation of damping-like spin-orbit effective fi elds and the concomitant effective spin Hall angle of Pt/Co. Results and DiscussionIn our Ta(2)/Pt(4)/Co(0.3)/HfO x (4) (unit in nanometers) heterostructures ( Figure 1 a), the bottom Ta layer acts as a seed layer to form a better Pt(111) orientation, and consequently induces a strong perpendicular magnetic anisotropy (PMA). Despite its high spin Hall angle, [ 9,30 ] the contribution of spin current from Ta to Co is negligible due to the short spin diffusion length of Pt and opposite sign of the spin Hall angle of Ta and Pt. [ 8,31 ] The capping HfO x layer, with a large permittivity, also enhances the PMA and protects the metal layers from erosion by ionic Electrical control of current-induced spin-orbit effects in magnets is supposed to reduce the power consumption in high-density memories to the utmost extent, but the effi cient control in metallic magnets at a practical temperature remains elusive. Here, the electrical manipulation of spin-orbit torque is investigated in perpendicularly magnetized Pt/Co/HfO x heterostructures in a nonvolatile manner using an ionic liquid gate. The switching current of magnetization can be reversibly tuned by a factor of two within a small gate voltage range of 1.5 V. The modulation of effective spin Hall angle and the corresponding damping-like torque...

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Electrical Manipulation of Orbital Occupancy and Magnetic Anisotropy in Manganites

Abstract: Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental research and industrial production.

Cited by 108 publications

References 37 publications

Defect engineering of high‐performance potassium sodium niobate piezoelectric ceramics sintered in reducing atmosphere

Defect engineering of high‐performance potassium sodium niobate piezoelectric ceramics sintered in reducing atmosphere

Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO₃/LaNiO₃ Heterostructures

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

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Electrical Manipulation of Orbital Occupancy and Magnetic Anisotropy in Manganites

Abstract: Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental research and industrial production.

Cited by 108 publications

References 37 publications

Defect engineering of high‐performance potassium sodium niobate piezoelectric ceramics sintered in reducing atmosphere

Defect engineering of high‐performance potassium sodium niobate piezoelectric ceramics sintered in reducing atmosphere

Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO3/LaNiO3 Heterostructures

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

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Product

Resources

About

Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO₃/LaNiO₃ Heterostructures