In Kondo insulator samarium hexaboride SmB6, strong correlation and band hybridization lead to an insulating gap and a diverging resistance at low temperature. The resistance divergence ends at about 5 Kelvin, a behavior recently demonstrated to arise from the surface conductance. However, questions remain whether and where a topological surface state exists. Quantum oscillations have not been observed to map the Fermi surface. We solve the problem by resolving the Landau Level quantization and Fermi surface topology using torque magnetometry. The observed Fermi surface suggests a two dimensional surface state on the (101) plane. Furthermore, the tracking of the Landau Levels in the infinite magnetic field limit points to -1/2, which indicates a 2D Dirac electronic state.The recent development of topological insulators is a triumph of single electron band theory [1][2][3][4][5][6][7][8] . It is interesting to understand whether similar exotic states of matter can arise once strong electronic interaction comes into play. Kondo insulators, a strongly-correlated heavyfermion system, offer a good playground for the exploration of this question. In a Kondo insulator 9,10 , the hybridization between itinerant electrons and localized orbitals opens a gap and makes the material insulating. Once the sample temperature is cold enough, the electronic structure in the strongly correlated system can be mapped to a rather simple electronic state that resembles a normal topological insulator 11 . As a result, in the ground state of the Kondo insulator there exists a bulk insulating state and a conductive surface state. In samarium hexaboride (SmB 6 ), the existence of the surface state has been suggested by recent experimental observations of the surface conductance as well as a map of the hybridization gap 12-14 . However, a direct observation of the Fermi surface has not yet been achieved by transport measurements in Kondo insulators. In this letter we report the observation of quantum oscillations in Kondo insulator SmB 6 using torque magnetometry. The observed Fermi surface is shown to be two-dimensional (2D) and arises from the crystalline (101) surface, and the Landau Level index plot shows a Berry phase contributed -1/2 factor in the infinite field limit, which indicates that this Fermi surface encloses Dirac points, a characteristic property of topological insulators.The direct observation of quantum oscillations is an essential step in understanding the electronic state of the bulk and surfaces of Kondo insulator. Wolgast et al. have argued strongly that the great robustness and certain other properties of the low T surface conductivity of SmB 6 are best understood as a consequence of having TI surface states 12 . Nonetheless there is yet no direct evidence for this interpretation of the surface conduction. Such evidence should come from microscopic measurements of the electronic structure, as has been accomplished for the weakly correlated TI materials, such as Bi 2 Se 3 , Bi 2 Te 3 , and graphene [15][16][17][18][19...

Melem: a highly efficient metal-free blue-emitting phosphor, easy to synthesize and abundant in reserve.

As unique building blocks for next‐generation optoelectronics, high‐quality 2D p–n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe2 by cetyltrimethyl ammonium bromide (CTAB) is achieved for the first time to form a high‐quality intramolecular p–n junction with superior optoelectronic properties. Efficient manipulation of charge carrier type and density in TMDs via electron transfer between Br− in CTAB and TMDs is proposed theoretically by density functional theory (DFT) calculations. Compared with the intrinsic WSe2 photodetector, the switching light ratio (Ilight/Idark) of the p–n junction device can be enhanced by 103, and the temporal response is also dramatically improved. The device possesses a responsivity of 30 A W−1, with a specific detectivity of over 1011 Jones. In addition, the mechanism of charge transfer in CTAB‐doped 2D WSe2 and WS2 are investigated by designing high‐performance field effect transistors. Besides the scientific insight into the effective manipulation of 2D materials by chemical doping, this work presents a promising applicable approach toward next‐generation photoelectronic devices with high efficiency.

We investigate the exchange coupling between perpendicular anisotropy (PMA) Co/Pt and IrMn in-plane antiferromagnets (AFMs), as well as tunneling anisotropic magnetoresistance (TAMR) in [Pt/Co]/IrMn/AlO_{x}/Pt tunnel junctions, where Co/Pt magnetization drives rotation of AFM moments with the formation of exchange-spring twisting. When coupled with a PMA ferromagnet, the AFM moments partially rotate with out-of-plane magnetic fields, in contrast with being pinned along the easy direction of IrMn for in-plane fields. Because of the superior thermal tolerance of perpendicular exchange coupling and the stability of moments in ~6 nm-thick IrMn, TAMR gets significantly enhanced up to room temperature. Their use would advance the process towards practical AFM spintronics.