Fe-doped ZnO nanocrystals are successfully synthesized and structurally characterized by using x-ray diffraction and transmission electron microscopy. Magnetization measurements on the same system reveal a ferromagnetic to paramagnetic transition temperature above 450 K with a low-temperature transition from the ferromagnetic to the spin-glass state due to canting of the disordered surface spins in the nanoparticle system. Local magnetic probes like electron paramagnetic resonance and Mössbauer spectroscopy indicate the presence of Fe in both valence states Fe 2+ and Fe 3+ . We argue that the presence of Fe 3+ is due to possible hole doping in the system by cation ͑Zn͒ vacancies. In a subsequent ab initio electronic structure calculation, the effects of defects ͑e.g., O and Zn vacancies͒ on the nature and origin of ferromagnetism are investigated for the Fe-doped ZnO system. Electronic structure calculations suggest hole doping ͑Zn vacancy͒ to be more effective to stabilize ferromagnetism in Fe-doped ZnO and our results are consistent with the experimental signature of hole doping in ferromagnetic Fe-doped ZnO samples.

From first principles calculations, we investigate the stability and physical properties of single layer h-BN sheet chemically functionalized by various groups viz. H, F, OH, CH3, CHO, CN, NH2 etc. We find that full functionalization of h-BN sheet with these groups lead to decrease in its electronic band gap, albeit to different magnitudes varying from 0.3 eV to 3.1 eV, depending upon the dopant group. Functionalization by CHO group, in particular, leads to a sharp decrease in the electronic band gap of the pristine BN sheet to ~ 0.3 eV, which is congenial for its usage in transistor based devices. The phonon calculations on these sheets show that frequencies corresponding to all their vibrational modes are real (positive), thereby suggesting their inherent stability. The chemisorption energies of these groups to the B and N atoms of the sheet are found to lie in the range of 1.5 -6 eV.Comment: 15 pages, 2 figures PRB(submitted

No abstract

Using first-principles density functional calculations, we show that a transition-metal (TM)-doped defected graphene sheet with periodic repetition of a C atom vacancy (V c ) can be used as a promising system for hydrogen storage. The TM atoms adsorbed above and below the defected site are found to have a strong bonding to the graphene sheet, thereby circumventing the problem of TM clustering, which is the main impediment for efficient hydrogen storage in nanostructure systems. The results reveal that, when the vacancymodulated graphene sheet is decorated on both sides by a combination of less than half-filled (TM 1 ) and more than half-filled (TM 2 ) elements, it results in the adsorption of molecular hydrogen with a binding energy lying in the desirable energy window. Among all the different TM 1 -TM 2 combinations at a C vacancy site, Fe-Ti turns out to be the best choice where five H 2 molecules get attached on each pair. To underscore the stability of these hydrogenated systems, we have performed an ab initio molecular dynamics simulation for a fully decorated defected graphene structure. The results show that, at room temperature, the system is stable with a gravimetric efficiency of 5.1 wt % of hydrogen, whereas desorption starts only at ∼400 K.