The power available from transistor-sized semiconductor diode lasers has increased rapidly in recent years, more than doubling every year. Continuous outputs of several watts and pulsed powers in the kilowatt range with 50 percent overall efficiency are now possible with these compact devices. These developments may signal the start of a technological advancement in optics comparable to the solid-state revolution in electronics 20 years ago.
Continuous-wave output power levels of 38 W from one facet have been obtained from a 1 cm monolithic AlGaAs laser array with a 2 mm total active aperture width. One of the diodes has been operated under constant current conditions (initial output power of 5 W) at room temperature for over 1100 h.
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