Advances in diode laser pumps

Streifer, W.; Scifres, D. R.; Harnagel, G. L.; Welch, David; Berger, J.; Sakamoto, Masamichi

doi:10.1109/3.209

Cited by 105 publications

(30 citation statements)

References 22 publications

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“…Semiconductor diode lasers typically pump at $808 nm, to directly excite the 4 F 5/2 and 2 H(2) 9/2 manifold [2,3]. The 4 F 5/2 and 2 H(2) 9/2 manifold typically lies $900 cm À1 (938 cm À1 in YLiF 4 ) above the 4 F 3/2 laser level.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the 4F5/2 and 2H(2)9/2 manifold lifetime in Nd3+:YLiF4

Ende¹,

Brooks²,

Tiedje³

et al. 2006

Journal of Luminescence

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Section: Introductionmentioning

confidence: 99%

Measurement of the 4F5/2 and 2H(2)9/2 manifold lifetime in Nd3+:YLiF4

Ende¹,

Brooks²,

Tiedje³

et al. 2006

Journal of Luminescence

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“…The 5W or lOW bar arrays have a 1cm aperture with a 20% diode packing density. In the laboratories cw power levels of up to 76W and efficiencies well above 50% have been shown [ 2 ] . There also exist broad area laser diodes offered by Sony with a 2OOnu wide single stripe and with 1W output power.…”

Section: Discussionmentioning

confidence: 99%

Diode-pumped neodymium lasers

Albers¹

1990

SPIE Proceedings

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Since the invention of diode lasers in the early 1960's there had been continuous investigations in laser diode pumped solid state lasers as has been reviewed in detail by a number of papers ( see e.g. [1] ). There are two main advantages of using diode lasers instead of flashlaraps as a pump source for solid state lasers: First the emission of the diode lasers matches well with the absorption bands of several Rare Earth ions that are doped in laser crystals ( mainly Nd3+, but also Er3, Tm3, Dy3', and others ) . This summary will report only about diode lasers at a wavelength of around BlOnm, which fits to an absorptionband of Nd3t Second diode lasers provide the possibility of longitudinally pumped configurations and therefore an excellent mode matching with the solid state laser mode. For both reasons the efficiency of a diode laser puniped solid state laser is nuch higher than of a flashlamp pumped one.Since the early 1980's a much wider interest in diode laser pumped solid state lasers arose. It was stimulated by the improved performance of the new generation of diode lasers in terms of reliability , operational lifetime and output power [21.Two important steps in direction to the diode lasers at present time were the developments of double hetero (DH) structure-and graded index separate confinement hetero (GrInSCH) structurediode lasers. In the same way the development of new production techniques were necessary to ensure the reliability of the diode lasers. Starting with the liquid phase epitaxy (LPE) the (GaAl)As structures are now grown by the molecular beam epitaxy (MBE), mainly used for very high precision laboratory investigations, and metal organic chemical vapour deposition (MOCVD), mainly used for commercial production.As a first commercial product SDL introduced a 100mW array in 1984. Since then the output power of the commercially available diode lasers increased by two orders of magnitude to lOW. These diode lasers are multi stripe bar arrays like the 5W diode laser 48 / SPIE Vol. 1277 High-Power Solid State Lasers and Applications (1990) Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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“…When a fiber-coupled diode pumped solid state crystal (DPSS) Nd:YVO 4 in CW mode of operation, a strong thermal lensing effect with Nd:YVO 4 . This thermally induced focusing lens drove the laser resonator out of the stable regime.…”

Section: Experimental Set-up and Optimizing (Depss) Cw Nd:yvo 4 Lasermentioning

confidence: 99%

“…In contrast to flash lamp pumping (the conventional method for generating a population inversion in solid-state gain media); excitation using a monochromatic and spatially coherent laser pump source offers lower threshold, higher output efficiency, reduction of thermal loading and improving mode quality. Semiconductor lasers were in their formative years, providing low powers (few mW); they were not competitive with flash lamps, until efficient high power AlGaAs laser diode became available in the mid-1980's [3,4]. Today, reliable one and two-dimensional laser diode arrays are commercially available with continuous-wave and quasi-CW peak powers up to 100 W and 10 kW respectively [5].…”

Section: Introductionmentioning

confidence: 99%

“…Exploring the properties of Nd:YVO 4 lasers has become very common in the scientific literature in the last decade [6][7][8]. One important direction popular was related to Q-switching of Nd:YVO 4 and microchip lasers [9][10][11][12]. In general, Q-switching is an effect in which pulses of light appear at the output of the laser while continuous pumping is applied.…”

Section: Introductionmentioning

confidence: 99%

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Diode Pumped High Peak Power Quasi Q-Switched and Passively Q-Switched Nd:YVO<sub>4</sub> Lasers at 1064 nm and 532 nm using Cr:YAG and KTP crystals

El-Sherif¹,

Talat²

2013

OPJ

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Diode end-pumped solid-state lasers have the potential to yield high quality laser beams with high efficiency for laser range finding and warning receiver applications as well as day and night military laser designation systems. In this paper we presents theoretical calculations using Advanced Dynamics Professional LASCAD software and experimental studies for a high power pigtailed fiber diode laser module of 8 W operating at 808 nm with a specially designed high efficiency cooling system, end pumped high-efficiency Nd:YVO 4 laser of 3 × 3 × 10 mm rod and overall cavity length of 44 mm. To the best of our knowledge a self Q-switching effects was generated in Nd:YVO 4 laser by changing the cavity dimensions and the position of the intracavity KTP crystal at certain regime of operation for the first time, in which the cavity length is reduced to be 30 mm and the distance between Nd:YVO 4 rod and KTP crystal is only 1mm. Self Q-switched laser pulse at 532 nm with high peak power of 96 W, pulse width of 88 ns at FWHM and repetition rate of 400 kHz was achieved. Experimental studies of a passive Q-switched Nd:YVO 4 laser using Cr:YAG crystal with three different transmissions of 30%, 40% and 70% were investigated. Passive Q-switched laser pulse at 1064 nm and narrow line width of less than 1.5 nm with highest peak power of nearly 18 kW, short pulse width of less than 4 ns at FWHM and higher repetition rate of 45 kHz using Cr:YAG with transmission of 30% was achieved for the first time.

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Advances in diode laser pumps

Cited by 105 publications

References 22 publications

Measurement of the 4F5/2 and 2H(2)9/2 manifold lifetime in Nd3+:YLiF4

Measurement of the 4F5/2 and 2H(2)9/2 manifold lifetime in Nd3+:YLiF4

Diode-pumped neodymium lasers

Diode Pumped High Peak Power Quasi Q-Switched and Passively Q-Switched Nd:YVO<sub>4</sub> Lasers at 1064 nm and 532 nm using Cr:YAG and KTP crystals

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Advances in diode laser pumps

Cited by 105 publications

References 22 publications

Measurement of the 4F5/2 and 2H(2)9/2 manifold lifetime in Nd3+:YLiF4

Measurement of the 4F5/2 and 2H(2)9/2 manifold lifetime in Nd3+:YLiF4

Diode-pumped neodymium lasers

Diode Pumped High Peak Power Quasi Q-Switched and Passively Q-Switched Nd:YVO&lt;sub&gt;4&lt;/sub&gt; Lasers at 1064 nm and 532 nm using Cr:YAG and KTP crystals

Contact Info

Product

Resources

About

Diode Pumped High Peak Power Quasi Q-Switched and Passively Q-Switched Nd:YVO<sub>4</sub> Lasers at 1064 nm and 532 nm using Cr:YAG and KTP crystals