High power diode laser arrays

Endriz, John G.; Vakili, Mohammad Ali; Browder, Gerald S.; DeVito, Mark; Haden, J.M.; Harnagel, G. L.; Plano, W. E.; Sakamoto, Masamichi; Welch, David; Willing, S.; Worland, D. P.; Yao, Han

doi:10.1109/3.135214

Cited by 96 publications

(15 citation statements)

References 18 publications

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“…This development required monolithic laser arrays with high optical output power, high efficiency, high reliability and long life time [4,5]. The highest continous wave (cw) operation from a monolithic laser array reported to date is 120 W and efficiencies (electro-to optical) of about 40 % are achieved.…”

Section: Introductionmentioning

confidence: 99%

Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy

Semjonov

1995

International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

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The facet heating ofGaAlAs/GaAs DQW high power laser diodes is one ofthe main processes for fast degradation and cathastrophical optical damage in the near ofthe laser mirrors. This local heating is caused by nonradiative recombination ofthe injected carriers and by optical absorption near the cleaved or coated facets. The Stokes and anti-Stokes lines have been measured by excitation with an Ar Ion laser by high local resolution ofabout 1tm and a accuracy of the beam position of 0. 5 xm. The facet temperature is calculated from the ratio of Stokes and antiStokes intensity. Lateral and tranversal temperatures distribution at the facet ofmultistripe arrays and the temperature as a function ofinjection current has been studied. The influence of different mechanisms on the accuracy ofthe obtained temperatures is discussed.

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Section: Introductionmentioning

confidence: 99%

Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy

Semjonov

1995

International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

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“…High-power semiconductor laser diodes and arrays are efficient devices to pump solid state lasers [1,2]. In spite of high electrical-to-optical conversion efficiency (about 50--60%) and effective thermal mounting of the devices to a heat sink, a large amount of loss power leads to a considerable increase of temperature in the active zone of the laser diode under high-power operation.…”

Section: Introductionmentioning

confidence: 99%

Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

Puchert

Menzel

Bärwolff

et al. 1997

Journal of Thermal Analysis

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The thermal behaviour of high-power GaAIAs/GaAs laser arrays is described by a comprehensive thermal two-dimensional finite-element model which takes several heat sources into account. The influence of these different heat sources on the two-dimensional temperature distribution in the laser array has been investigated. The power densities of the heat sources related to the active region were calculated by an analytic description of the temperature dependent processes as spontaneous emission, Auger recombination and interface recombination. The results of our numerical calculation show, that the local distribution of the heat sources has a strong influence on the lateral temperature profile and on the maximum temperature in the active region of the array, i.e. on the thermal resistance. The calculated temperature profiles are in a good agreement with the measured lateral temperatures at different injection currents and heat sink temperatures. The difference between calculated and measured maximum temperature is lower than 0.75"C.

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“…El haz láser, que emerge con una alta divergencia de cada diodo, ha de ser colimado por un sistema óptico compuesto generalmente por microlentes cilindricas que se integran en la matriz de diodos (2)(3)(4)(5). Un conjunto de prismas y lentes dirigen y focalizan la energía liberada por cada diodo, superponiéndola en el plano focal, con el fin de incrementar la densidad de potencia liberada por el sistema.…”

Section: Introducción (A)unclassified

Recubrimientos superficiales con láseres de diodos de alta potencia

Molpeceres¹,

Tomas²,

Perez³

et al. 1998

REVMETAL

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;Resumen La posibilidad de disponer actualmente de láseres de diodos con una potencia de emisión óptica superior a 1 kW permite abordar un gran número de aplicaciones en el ámbito del procesado de materiales con láser, dominado tradicionalmente por los láseres de C0 2 y Nd:YAG. En el presente trabajo, se muestra la aplicación de los láseres de diodos de alta potencia al recubrimiento de materiales metálicos con aleaciones de base cobalto y níquel. Se describen las características del sistema empleado y se muestran los resultados obtenidos.Palabras clave: Láseres de diodos. Recubrimiento. Plaqueado. Tratamiento superficial con láser. Coating with high power diode lasersAbstract Nowadays, high power diode láser systems are available in the market. These systems, based on arrays of small diode lasers, can achieve more than 1 kW of output power and are currently offering new possibilities in the field of láser material processing where C0 2 and Nd:YAG lasers were used up to the present. The results obtained in some materials cladding based on cobalt and nickel alloys as additional materials is presented. The instrumental set-up used in these experiments are described.

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High power diode laser arrays

Cited by 96 publications

References 18 publications

Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy

Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy

Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

Recubrimientos superficiales con láseres de diodos de alta potencia

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