The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition of the matrix and a sacrificial organic phase (porogen), postcuring treatments may be used to create porosity by evaporation of the porogen. In this paper, Auger electron spectroscopy is performed to simultaneously modify the material (e-beam cure) and measure the corresponding changes in structure and chemical composition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements in attenuated total reflection mode confirm the Auger results. The porogen removal and matrix cross-linking result in the formation of a Si–O–Si network under e-beam or ultra violet cure. The possible degradation of these materials, even after cure, is mainly due the presence of Si–C bonds.
A laser-based instrument for the study of ultrafast chemical dynamics by soft x-ray-probe photoelectron spectroscopy Rev.Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
The down-scaling of CMOS interconnects increases dielectric reliability challenges. Porous ULK materials used in advanced interconnects may suffer from charge trapping and detrimental aging during bias-thermal stress experiments. We demonstrate that a threshold between charging and aging domains may occur for an injected electrical energy of 0.1 MJ/cm 3 at 250∫C after interconnect integration. Electron injection in the dielectric is likely to induce proton formation and motion. For more damaging stress currents, in-situ Auger experiments demonstrate that the degradation is mostly due to modifications around carbon bonds.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.