Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond

Key Process steps for high reliable SiOCH low-k dielectrics for the sub 45nm technology nodes

“…5). L-L.Chappelon [6] already observed all the benefits of this protective capping. In our case, a factor 1000 time to failure increase can be observed with a good intrinsic Weibull slope (1.4).…”

Process Technology for Copper Interconnects

“…There are a number of problems with Cu CMP in a porous low-k structure, including Cu dishing and insulator erosion, cracking and adhesion loss in the dielectric stack, and scratching or contamination of the low-k material by components or the slurry or reaction by-products [104][105][106][107][108]. The problems with dishing/erosion and cracking/adhesion loss can be minimized by reducing the downforce during CMP and improving the adhesion between layers in the stack [104].…”

“…The problems with dishing/erosion and cracking/adhesion loss can be minimized by reducing the downforce during CMP and improving the adhesion between layers in the stack [104]. There are two basic integration schemes for Cu CMP with porous low-k structures: the permanent polish stop method (Figure 8.16A-C) [104,105,109] and the direct CMP method ( Figure 8.16D-F) [109]. In the permanent polish stop approach, a relatively dense material, such as SiO 2 [104] or nonporous SiCOH [105,109], is used on top of the porous low-k material.…”

Effect of polymer structure on the morphologies and dielectric properties of nanoporous polyimide films

“…Such nanoporous and mesoporous materials have attracted tremendous amount of interests for application in IC devices for microelectronics technologies. [6][7][8][9][10] Polyimide (PI) derived from pyromellitic dianhydride (PMDA) and oxydianiline (ODA) has been proved to be the most suitable high performance polymer for microelectronic applications because of its process ability in the poly(amic acid) (PAA) precursor form and excellent properties after thermal curing because of the semi-rigid aromatic structure. 11 Therefore, considerable attentions have been focused on the preparation of low-dielectric porous PI films with pore size ranging from angstroms to micrometers.…”