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The thermal reaction of ethyl undecylenate with a hydrogen-terminated porous silicon surface takes place at 85 °C to yield an organic monolayer covalently attached to the surface through Si−C bonds. The presence of traces of water in ethyl undecylenate induces a partial oxidation of the surface and leads to a surface that is composed of alkylated and oxidized regions. A PSi surface with a comparable chemical composition was prepared by the direct reaction of an electrochemically anodized PSi surface (in 1 M H2SO4) with anhydrous ethyl undecylenate. The physical and chemical properties of the functionalized surfaces have been characterized using photoluminescence, transmission infrared, and X-ray photoelectron spectroscopies. The derivatized surfaces proved to be very stable in boiling CCl4 and water, and against corrosion when exposed to 100% humidity in air.

Quantification of the magnitude of preferential sputtering of oxygen from metallic oxides has been examined for a large number of 30 nm thick amorphous oxides deposited onto polished silicon substrates. The method of analysis was derivative-mode Auger analysis carried out in a cleaner vacuum system and with cleaner initial surfaces than has been the case usually for data found in the literature. Ion sputtering was primarily with 3 keV xenon ions but the effect of ion energy (1, 3 and 4.5 keV), ion mass (argon or xenon) and sputter rate was also examined. The magnitude of preferential sputtering at 2OoC was generally much less than has been reported previously and was not a function of ion energy, mass or sputter rate over the range studied. The results separate into two group: oxides that reduce appreciably and those that do not. The results agree well with the predictions from the theoretical model of Kelly.' It must be concluded from the work that most of the data reported in literature are primarily the result of unrecognized and therefore unreported variables. Likely candidates are contaminants within the ion beam and background environment that contribute chemical effects to the sputter process, ion beam and electron beam heating of poorly conducting samples, or redeposition of sputtered material into the analysis area.

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GdSi x O y gate dielectric films were deposited on Si(001) substrates using ultra-high-vacuum electron-beam evaporation from pressed-powder targets. Transmission electron microscopy showed that the films were amorphous as deposited and remained amorphous when annealed to temperatures up to 900 °C. Capacitance–voltage measurements indicate an equivalent oxide thickness (EOT) of 13.4 Å for a film with composition GdSi0.56O2.59 determined by in situ x-ray photoelectron emission spectroscopy. After forming gas annealing at 500 °C the EOT was reduced to 11.0 Å, at a physical thickness of 45 Å. The same film has a low leakage current of approximately 5.7×10−3 A cm−2 at +1 V, a reduction of 8.7×104 compared to current density estimates of SiO2 films with the same specific capacitance.

Hydrogen gas production during corrosion of copper by water Hultquist, G.; Graham, M. J.; Szakalos, P.; Sproule, G.I.; Rosengren, A.; Gråsjö, L.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca.

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