A comparative analysis of different GaAs surface treatment effects onto the Schottky barrier height in Al/n‐GaAs (100) structures by electrical measurements of current—voltage (I‐U) and capacitance‐voltage (C‐U) characteristics is presented. Treatment in selenium vapour leads to a decrease of the electron density of states (EDS). The effect of technological conditions (temperature, process duration) of GaAs treatment in selenium vapour onto φbn and the composition of GaAs surface which was controlled by Auger electron spectroscopy method (AES) is investigated. The obtained data allowed to conclude that the changes in φbn are determined by the deviation of the composition from the stoichiometric one at the GaAs interface.
Eine vergleichende Analyse der Effekte verschiedener Oberflächenbehandlungen auf die Schottky‐Barrierenhöhe von Al/n‐GaAs (100) Strukturen aus Strom—Spannungs‐ und Kapazitäts—Spannungs‐Charakteristiken wird präsentiert. Behandlung in Se‐Dampf verringert die Elektronenzustandsdichte. Der Einfluß der technologischen Bedingungen der Behandlung des GaAs in Se‐Dampf (Temperatur, Prozeßdauer) auf φbn und die Zusammensetzung der GaAs‐Oberfläche, die mittels Augerelektronen‐spektroskopie kontrolliert wird, wird untersucht. Die Ergebnisse lassen den Schluß zu, daß die Änderungen von φbn durch Abweichungen von der stöchiometrischen Zusammensetzung der GaAs‐Oberfläche bestimmt werden.
A method for forming thin films of the Cu2SnS3 compound homogeneous in phase composition for use in solar cell devices is proposed. The Cu-Sn alloy layers deposited by thermal spraying in vacuum were annealed in sulfur vapor in a graphite chamber of the quasi-closed volume type. Using X-ray phase analysis, the optimal conditions for the formation of Cu2SnS3 films homogeneous in phase composition were found: annealing temperature 450 °C, sulfur vapor pressure ∼ 0.2 torr. The sulfide layers obtained in this way in their elemental composition correspond to the Cu2SnS3 compound stoichiometry. Cu2SnS3 films have an optical band gap of 1 eV, and the absorption coefficient in the visible region of the spectrum is 2·105 cm –1.
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