Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100)

Bezryadin, N. N.; Kotov, G. I.; Arsentyev, I. N.; Vlasov, Yu. N.; Стародубцев, А А

doi:10.1134/s1063782612060073

Cited by 7 publications

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The thicknesses of such oxide films can be to 5 nm, depending on a number of factors [1,2]. In the case of GaAs, the native oxide is multicomponent and consists of As, As 2 O 5 , As 2 O 3 , and Ga 2 O 3 [3][4][5][6]. The study of the processes of interaction of the native oxide of GaAs with the substrate surface and growth components upon molecular-beam epitaxy makes it possible to minimize their influence on the surface morphology, which is partially topical for problems of nanosized structurization of the surface and also the synthesis of epitaxial nanostructures [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy

et al. 2016

View full text Add to dashboard Cite

A thermodynamic analysis of processes of interphase interaction in the Ga-As-O system has been performed and their theoretical laws have been determined, taking into account nonlinear thermal physical properties of the compounds, the oxide film compositions, and modes of molecular-beam epitaxy of GaAs. The processes of interaction of the native oxide of GaAs with the substrate material and also with Ga and As 4 from a vapor gaseous phase have been studied experimentally. The experimental results correlate with the results of the thermodynamic analysis. The laws of influence of the removal of the proper oxide on the evolution of the GaAs surface morphology under conditions of the molecular-beam epitaxy have been proposed.

show abstract