Phase selective growth of rhombohedral and cubic indium oxide polytypes was studied. The selective growth of different polytypes was achieved by adjusting substrate temperature and trimethylindium flow rate during metal organic chemical vapor deposition on c-plane sapphire. The optical band gaps of the cubic and rhombohedral phases were determined to be ∼3.7 and ∼3.0eV, respectively. On the basis of the performed structural investigations, a phenomenological model of the nucleation and growth of highly textured cubic In2O3 on Al2O3 (0001) is proposed.

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A variety of measurement techniques including photothermal deflection spectroscopy (PDS), auger electron spectroscopy (AES), (sub–bandgap) external quantum efficiency (EQE), and impedance spectroscopy are applied to poly[N‐900‐hepta‐decanyl‐2,7‐carbazole‐alt‐5,5‐(40,70‐di‐2‐thienyl‐20,10,30‐benzothiadiazole (PCDTBT)/[6,6]‐phenyl C71 butyric acid methyl ester (PC71BM) films and devices to probe the stability under thermal annealing. Upon annealing, solar cell performance is drastically decreased for temperatures higher than 140 °C. Detailed investigation indicate changes in polymer:fullerene interactions resulting in the formation of a polymer wetting layer upon annealing at temperatures higher than 140 °C. Upon device completion this wetting layer is located close to the metal electrode and therefore leads to an increase in recombination and a decrease in charge carrier extraction, providing an explanation for the reduced fill factor (FF) and power conversion efficiency (PCE).

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A room temperature ozone induced oxidation of thin InN films is proposed to improve the electric transport properties. The sheet carrier density is reduced upon oxidation by a value which is in the order of the electron concentration of an untreated InN surface. Thus, ozone effectively passivates the surface defect states on InN and might be an effective method to prepare InN films for electronic applications. A model for the improved electron transport properties is proposed taking into account the decreased surface band bending and the decreased influence of surface electrons on the net mobility of InN layers.