Growth of cubic InN on r-plane sapphire

Cimalla, V.; Pezoldt, Joerg; Ecke, G.; Kosiba, R.; Ambacher, O.; Spieß, Lothar; Teichert, Gerd; Lu, Hai; Schaff, W. J.

doi:10.1063/1.1622985

Cited by 85 publications

(65 citation statements)

References 11 publications

(4 reference statements)

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“…41 Note that the ratio of wurtzite-to-zinc-blende-phase formation in the MBE growth of group-III nitrides strongly depends on the growth conditions, 45 which can explain the different results.…”

Section: Semipolar "101 1… Innmentioning

confidence: 94%

“…It has been previously shown that direct growth of InN on r-plane sapphire results in the nucleation of zinc-blende InN due to the much lower lattice mismatch compared to the wurtzite InN. 41 Indeed, the HRTEM images taken from the interface region of our semipolar InN film revealed the presence of zinc-blende InN with ͑002͒ orientation at the interface with the substrate ͑Fig. 11͒.…”

Section: Semipolar "101 1… Innmentioning

confidence: 99%

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Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a-and m-plane surface orientations on r-plane sapphire and ͑100͒ ␥-LiAlO 2 , respectively, and semipolar ͑1011͒ InN grown on r-plane sapphire. The on-axis rocking curve ͑RC͒ widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN ͓0001͔ for the a-plane films, and maxima at InN ͓0001͔ for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN͑111͒A and InN͑111͒B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a-and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

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Section: Semipolar "101 1… Innmentioning

confidence: 94%

Section: Semipolar "101 1… Innmentioning

confidence: 99%

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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“…35 In addition InN is predominantly grown as hexagonal wurtzite material rather than the more symmetric cubic zinc-blende structure, although growth of cubic InN is possible. 36 Some preliminary data on time resolved photoluminescence of InN are shown in Fig. 4 and discussed below.…”

Section: Time Resolved Photoluminescence Of Slowed Carrier Coolingmentioning

confidence: 99%

Hot carrier solar cell absorbers: materials, mechanisms and nanostructures

et al. 2014

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The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.

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“…20 nearly equals to the spacing between {200} planes in c-InN (~2.49 Å). 25 In this work, while (Al)GaN could be grown without obvious oxidation using the MOCVD, but InN showed easily oxidizable nature, as Yoshimoto et al pointed out in MBE growth. 11 It should be noted that there's a possibility of formation of oxide precipitates in InN during MOCVD growth even in an inert gas environment such as N 2 because H 2 carrier gas generally introduced to the reactor chamber for subsequent (Al)GaN growth and H 2 produced by the decomposition of NH 3 can play the same role.…”

Section: Iiic Inn Quantum Dotsmentioning

confidence: 87%

Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

Nurmikko¹,

Han²

2007

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We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

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Growth of cubic InN on r-plane sapphire

Abstract: Articles you may be interested inDirect growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxya)

Cited by 85 publications

References 11 publications

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Hot carrier solar cell absorbers: materials, mechanisms and nanostructures

Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

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