A delay-line position-sensitive detector with improved performance is presented. In this device, timing is carried out by means of fast digitizer boards. The use of dedicated signal processing procedures leads to a timing accuracy of 70 ps and a dead-time below 1.5 ns. As a result, the spatial resolving power of this detector is close to 1 mm leading to a high multihit capability. A temporary detector has been designed in which the delay-line anode is combined with a phosphor screen allowing additional positioning to be made via a charge-coupled device camera. This additional positioning is used to unambiguously quantify performances in terms of spatial resolution and multihit capabilities. A three-dimensional atom probe analysis of a material containing low evaporation field phases is used to demonstrate the capabilities of this detector.

The preferential retention of high evaporation field chemical species at the sample surface in atom-probe tomography (e.g., boron in silicon or in metallic alloys) leads to correlated field evaporation and pronounced pile-up effects on the detector. The latter severely affects the reliability of concentration measurements of current 3D atom probes leading to an under-estimation of the concentrations of the high-field species. The multi-hit capabilities of the position-sensitive time-resolved detector is shown to play a key role. An innovative method based on Fourier space signal processing of signals supplied by an advance delay-line position-sensitive detector is shown to drastically improve the time resolving power of the detector and consequently its capability to detect multiple events. Results show that up to 30 ions on the same evaporation pulse can be detected and properly positioned. The major impact of this new method on the quantization of chemical composition in materials, particularly in highly-doped Si(B) samples is highlighted.

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SummaryThe three-dimensional atom probe (3DAP) technique gives the elemental identities and the position of atoms within the small volume analysed (on the order of 10 Â 10 Â 100 nm 3 ). The large number of atoms collected (up to two million) and the excellent spatial resolution of this instrument allows the observation of some crystallographic features of phases chemically identified. This paper shows that the application of a discrete Fourier transform algorithm to a 3DAP dataset provides information that is not easily accessible in real space. The derivation of the mean size of particles from Fourier intensities is an example. Using 3D`dark-field' imaging, single ordered grains were isolated from the disordered matrix of a ternary alloy. Moreover, the intrinsic spatial resolution of the instrument was evaluated by this method for pure metal; the resolution reaches 0.2 nm laterally and 0.06 nm in depth. This excellent resolution is shown to be sufficient to give access to the crystalline lattice. The use of image filtering in the reciprocal space enables for atomic columns to be imaged the first time from 3DAP data.

A systematic study of the biases occurring in the measurement of the composition of GaN by Atom Probe Tomography was carried out, in which the role of surface electric field and laser pulse intensity has been investigated. Our data confirm that the electric field is the main factor influencing the measured composition, which exhibits a deficiency of N at low field and a deficiency of Ga at high field. The deficiency of Ga at high field is interpreted in terms of preferential evaporation of Ga. The detailed analysis of multiple evaporation events reveals that the measured composition is not affected by pile-up phenomena occurring in detection system. The analysis of correlation histograms yields the signature of the production of neutral N due to the dissociation of GaN ions. However, the amount of N neutral molecules that can be detected cannot account for the N deficiency found at low field. Therefore, we propose that further mechanisms of neutral N evaporation could be represented by dissociation reactions such as GaN→ Ga+ N and GaN→ Ga+ N.

This work deals with the study of strength and ductility in ultrafine‐grained (UFG) Ti Grade 4 produced by equal channel angular pressing (ECAP) in combination with subsequent thermomechanical treatments. We found that additional annealing of UFG Ti resulted in unusual enhancement of strength and ductility, which is associated with not only small grain size but also with a grain boundary structure. The origin of this phenomenon is investigated using the results of transmission electron microscopy and atom probe tomography. The innovation potential of UFG Ti for medical use is considered.

The composition of GaAs measured by laser-assisted atom probe tomography may be inaccurate depending on the experimental conditions. In this work, we assess the role of the DC field and the impinging laser energy on such compositional bias. The DC field is found to have a major influence, while the laser energy has a weaker one within the range of parameters explored. The atomic fraction of Ga may vary from 0.55 at low-field conditions to 0.35 at high field. These results have been interpreted in terms of preferential evaporation of Ga at high field. The deficit of As is most likely explained by the formation of neutral As complexes either by direct ejection from the tip surface or upon the dissociation of large clusters. The study of multiple detection events supports this interpretation.

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