Pragmatic reconstruction methods in atom probe tomography

Vurpillot, F.; Gruber, M.; Costa, G. Da; Martin, Isabelle; Renaud, L; Bostel, A.

doi:10.1016/j.ultramic.2011.04.001

Cited by 66 publications

(47 citation statements)

References 38 publications

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“…and a multilayer with normal alignment to the symmetry axis~Fig. 4!, as these are important experimental applications of APT~Thompson et al, 2009;Marquis et al, 2010;Vurpillot et al, 2011!. The case of multilayers in three dimensions with the layers whose normal does not run along the specimen axis cannot be simulated with the current 2D implementation, as these are not rotationally symmetric. Results for the spherical particle case are presented in Figure 3.…”

Section: Axisymmetric Casesmentioning

confidence: 99%

Level Set Methods for Modelling Field Evaporation in Atom Probe

2013

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Atom probe is a nanoscale technique for creating three-dimensional spatially and chemically resolved point datasets, primarily of metallic or semiconductor materials. While atom probe can achieve local high-level resolution, the spatial coherence of the technique is highly dependent upon the evaporative physics in the material and can often result in large geometric distortions in experimental results. The distortions originate from uncertainties in the projection function between the field evaporating specimen and the ion detector. Here we explore the possibility of continuum numerical approximations to the evaporative behavior during an atom probe experiment, and the subsequent propagation of ions to the detector, with particular emphasis placed on the solution of axisymmetric systems, such as isolated particles and multilayer systems. Ultimately, this method may prove critical in rapid modeling of tip shape evolution in atom probe tomography, which itself is a key factor in the rapid generation of spatially accurate reconstructions in atom probe datasets.

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Section: Axisymmetric Casesmentioning

confidence: 99%

Level Set Methods for Modelling Field Evaporation in Atom Probe

2013

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“…6a) since Ge has a lower evaporation field compared to Si(F Si ∼ 33 V/nm > F Ge ∼ 29 V/nm). The multi-step model as developed by Vurpillot et al was applied to rectify image distortions [44]. The resulting 3D reconstruction (Fig.…”

Section: -P7mentioning

confidence: 99%

“…APT is a particularly well suited technique for the investigation of 3D architectured nano-devices like FinFET or gate all around (GAA) transistors [44]. In these devices, the gate is placed around the channel so that to better control the current flow between the source and the drain.…”

Section: Three-dimensional Elemental Map Of Chemical Species Within Gmentioning

confidence: 99%

Atom probe tomography in nanoelectronics

Blavette

Duguay

2014

Eur. Phys. J. Appl. Phys.

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Abstract. The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants and nanostructural features that are vital for nanoelectronics. Because of trajectory aberrations, APT images are subjected to distortions and local composition at the nm scale may either be biased. Procedures accounting for these effects were applied so that to correct images.

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“…Using a data reconstruction process with some user inputs, the 3D position and chemistry of the atoms are identified [5][6][7][8][9]. Among these inputs is the evaporation field of the atoms.…”

Section: Introductionmentioning

confidence: 99%

Impact of Extreme Electrical Fields on Charge Density Distributions in Alloys

et al. 2016

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The purpose of this work is to identify the field evaporation mechanism associated with charge density distribution under extreme fields, linking atom probe tomography (APT) experiments with density functional theory (DFT) modeling. DFT is used to model a materials surface bonding, which affects the evaporation field of the surface atoms under high electric fields. We show how the evaporation field of atoms is related to the charge density by comparing the directionality and localization of the electrons with the evaporation of single ions versus dimers. This evaporation mechanism is important for the reconstruction of APT data, which is partially dependent on the input evaporation fields of the atoms. In L12-Al3Sc, Al-Al surface atoms are more likely to evaporate as dimers than Al-Sc surface atoms. We find that this is due to Al-Al having a shared charge density, while Al-Sc has an increased density localized around the Sc atom. Further, the role of subsurface layers on the evaporation physics of the surface atoms as a function of charge density is considered. Beyond the practical considerations of improving reconstruction of APT data, this work provides an approach for design of surface chemistry for extreme environments.

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Pragmatic reconstruction methods in atom probe tomography

Cited by 66 publications

References 38 publications

Level Set Methods for Modelling Field Evaporation in Atom Probe

Level Set Methods for Modelling Field Evaporation in Atom Probe

Atom probe tomography in nanoelectronics

Impact of Extreme Electrical Fields on Charge Density Distributions in Alloys

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