Hetero‐epitaxial growth of CdSe on artificial mica (fluorflogopit, KMg3[Si3AlO10]F2), on (0001) sapphire and (111) Ge substrates has been investigated using the H2–CdSe vapour growth technique. The partial pressures of cadmium and selenium in the gas phase has been calculated for the different temperatures. The transport rate of the CdSe source and the growth rate of the epitaxial layers are theoretically and experimentally defined. A comparison between the experimental results and the thermodynamic model has been made. The structure and morphology of the layer surfaces are investigated.
The conditions for obtaining CdSe epitaxial layers on sapphire substrates with (0001) orientation are described. The sublimation of polycrystalline CdSe and its oriented deposition on the substrates is carried out in a localized quasiclosed volume of a vacuum system. The temperature influence on the structure and morphology of deposited layers is investigated in the crystallization region.
The partial pressure of cadmium in the gas phase of the system Cd–Se at different temperatures was theoretically defined. On this basic the growth rate of CdSe layers was calculated and compared with experimentally obtained data. The surface morphology of CdSe layers, epitaxially grown on (0001) α‐Al2O3 is presented.
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