Preparation of CdSe epitaxial layers by the vapour transport method

Abstract

Hetero‐epitaxial growth of CdSe on artificial mica (fluorflogopit, KMg3[Si3AlO10]F2), on (0001) sapphire and (111) Ge substrates has been investigated using the H2–CdSe vapour growth technique. The partial pressures of cadmium and selenium in the gas phase has been calculated for the different temperatures. The transport rate of the CdSe source and the growth rate of the epitaxial layers are theoretically and experimentally defined. A comparison between the experimental results and the thermodynamic model has been made. The structure and morphology of the layer surfaces are investigated.

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

“…For calculation of DG, the method reported in Ref. [18] was used; thermodynamic data were taken from Refs. [18] (CdSe) and [19] (CdTe), respectively.…”

Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation

“…23 was used, thermodynamic data were taken from Ref. This preferential incorporation of Se over Te is owing to the larger partial vapor pressure for Se than that of Te at growth temperature allowing for the replacement of adsorbed Te by selenium atoms.…”