1973
DOI: 10.1002/pssa.2210160134
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Growth of epitaxial CdSe upon sapphire

Abstract: The conditions for obtaining CdSe epitaxial layers on sapphire substrates with (0001) orientation are described. The sublimation of polycrystalline CdSe and its oriented deposition on the substrates is carried out in a localized quasiclosed volume of a vacuum system. The temperature influence on the structure and morphology of deposited layers is investigated in the crystallization region.

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Cited by 12 publications
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