We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO3/Ag/MoO3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO3/Ag/MoO3 ST-OSC by integrating MoO3/Ag/MoO3 (10/$$d_{m}$$ d m /$$d_{{od}}$$ d od nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO3/Ag (–/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of $$d_{m}$$ d m values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for $$d_{m} ~$$ d m  = 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing $$d_{m}$$ d m up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for $$d_{m} = 6$$ d m = 6  nm as 63.30 mA/cm2 and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC.

Dielectric/metal/dielectric plasmonic transparent structures play an important role in tailoring the high-optical performance of various optoelectronic devices. Though these structures are in significant demand in applications, including modification of the optical properties, average visible transmittance (AVT) and colour render index (CRI) and correlated colour temperature (CCT), obtaining optimal ones require precise thickness optimization. The overall objective of this study is the estimation of the optimal design concept of MoO3/Ag/WO3 (10/dAg/dWO3 nm) plasmonic structure. To explore the proper use in optoelectronic devices, we are motivated to conduct a rigorous optical evaluation on the thickness of layers. Having calculated optical characteristics and achieved the highest AVT of 97.3% for dAg = 4 nm and dWO3 = 6 nm by the transfer matrix method, it is quite possible to offer the potential of the structure acting as a transparent contact. Notably, the colour coordinates of the structure are x = 0.3110 and y = 0.3271, namely, it attributes very close to the Planckian locus. This superior colour performance displays that MoO3/Ag/WO3 shall undergo rapid development in neutral-colour windows and LED technologies. Structure with dAg = 6 nm and dWO3 = 16 nm exhibits the highest CRI of 98.58, thus identifying an optimal structure that can be integrated into LED lighting applications and imaging technologies. Besides the colour of structure with dAg = 4 nm and dWO3 = 8 nm is equal for D65 Standard Illuminant, the study reports that the range of CCTs are between 5000 and 6500 K. This optimization makes the structure employable as a near-daylight broadband illuminant. The study emphasizes that optimal MoO3/Ag/WO3 plasmonic structures can be used effectively to boost optoelectronic devices' performance.

No abstract

No abstract

In this work a parametric study of the fine and hyperfine structure (hfs) for the even parity configurations of atomic niobium (Nb I) is presented. A large amount of new experimental data, published during the last decade, have been considered for the fine and hfs analysis. A multi-configuration fit of 14 configurations have been performed by taking into account second-order of perturbation theory including the effects of closed shell-open shell excitations. Predicted values of level energies as well as magnetic dipole and electric quadrupole hfs constants of A and B are listed, if no experimental values are available.