We implement and characterize an optical narrowband amplifier based on stimulated Brillouin scattering with pump-to-signal relative frequency fluctuations overcome thanks to an active pump tracking. We achieve a precise characterization of this amplifier in terms of gain and noise degradation (noise figure). The performances of this stable selective amplification are compared to those of a conventional erbium-doped fiber amplifier in order to highlight the interest of the Brillouin amplification solution for active narrow optical filtering with a bandpass of 10 MHz. Thanks to the simple optoelectronic pump-to-signal tracking, the Brillouin active filter appears as a stable and reliable solution for narrowband optical processing in the coherent optical communication context and optical sensor applications.
International audienceWe report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes
International audienceWe report on a new cost effective, with a low temperature budget and simple bonding process on silicon, presenting efficient heat spreading and great potentialities in integration. This process is based on a thick electro-plated copper bonding layer through silicon vias and is expected to reduce significantly the bonded device internal temperature. We apply this process to realize 1.55-μm emitting vertical-cavity surface-emitting lasers. We demonstrate continuous wave operation from room temperature up to 55 °C, an internal temperature reduction of 13 °C, and we estimate a decrease of 30% of the overall device thermal impedance
Short-Abstract-We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.
International audienceWe report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes
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