VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span

Abstract

International audienceWe report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes

Class-A operation of an optically-pumped 16 µm-emitting quantum dash-based vertical-external-cavity surface-emitting laser on InP

“…On the other hand, as a result of the advantages offered by the quantification of lowdimensional quantum systems in terms of lower threshold current, broader gain response or improved thermal stability with respect to quantum wells, quantum dash-based active media have been extensively studied in the past [13]. Most of the contributions presented in the literature are related to edge-emitting and mode-locked lasers or semiconductor optical amplifiers [13,14], with some works on micrometer-long-cavity VCSELs, for which a well-defined and stable linear state-of-polarization [15,16], and a very wide gain bandwidth [17] were reported. It is thus interesting to investigate the behavior of such nanostructured semiconductor active medium in an external-cavity configuration, in order to benefit from the long-cavity setup in terms of laser linewidth and intensity noise performances.…”

Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication

“…Also, to improve device performances, III-V components are commonly bonded on host substrates presenting a high thermal resistivity. In the case of such demanding devices such as Vertical (external) cavity surface emitting lasers (V(E)CSEL), metallic bonding on a diamond substrate, and on metallic substrates have been reported to drastically improve their performances [3][4][5][6]. Nevertheless, in this last case, the integration with silicon microelectronics is unfortunately not possible.…”

Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser

“…In such a regime, VECSELs show extremely low Relative Intensity Noise (RIN) levels, down to the shot-noise. On the other hand, quantum dashbased active media have been demonstrated to ensure a stable state of polarization of the emitted light [3,4], together with a wide material gain [5] and a lower sensitivity to temperature. The original integration of such an active region into a VECSEL configuration is thus expected to extend existing functionalities and to open the way to new ones.…”