In this paper, we present the results of a 3D-numerical simulation of SOI TRI-GATE FinFET transistor. 3D-device structure, based on technology SOI (Silicon-On-Insulator) is described and simulated by using SILVACO TCAD tools and we compare the electrical characteristics results for Titanium Nitride (TiN) fabricated on Al2O3 (k ~ 9), HfO2 (k ~ 20) and La2O3 (k ~ 30) gate dielectric. Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage and electrical characteristics were demonstrated. The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio.
Pi-gate silicon-on insulator (SOI) MOSFET transistors have emerged as novel devices due to its simple architecture and better performance, better control over short-channel effects, and reduced power dissipation due to reduced gate leakage currents.As the oxide thickness scales below 2 nm, leakage currents due to tunnelling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO 2 gate oxide with a high-k material allows increased gate capacitance without the associated leakage effects.In this paper, we present the results of a 3D numerical simulation of the Pi-gate SOI MOSFET transistor. 3D device structure, based on the technology SOI is described and simulated by using SILVACO TCAD tools, and we compare the electrical characteristics results for titanium nitride (TiN) fabricated on Al 2 O 3 (k » 9), HfO 2 (k » 20), and La 2 O 3 (k » 30) gate dielectric.Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage, and electrical characteristics were demonstrated. From the simulation result, it was shown that HfO 2 is the best dielectric material with metal gate TiN.
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